PBSS5612PA,115 NXP Semiconductors, PBSS5612PA,115 Datasheet - Page 11

• Manufacturer Part Number: PBSS5612PA,115
• Description: TRANSISTOR PNP 12V 6A SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PBSS5612PA,115

• Package / Case: 3-HUSON
• Mounting Type: Surface Mount
• Power - Max: 2.1W
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 12V
• Transistor Type: PNP
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 60MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 190 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 300mA, 6A
• Dc Collector/base Gain Hfe Min: 130
• Gain Bandwidth Product Ft: 60 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 7 V
• Continuous Collector Current: - 6 A
• Maximum Dc Collector Current: - 7 A
• Power Dissipation: 2.1 W
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063494115

NXP Semiconductors
11. Soldering
PBSS5612PA
Product data sheet
Fig 17. Reflow soldering footprint SOT1061 (HUSON3)
2.3
Reflow soldering is the only recommended soldering method.
1.05
All information provided in this document is subject to legal disclaimers.
0.6
0.55
Rev. 01 — 7 May 2010
solder paste = solder lands
solder resist
occupied area
12 V, 6 A PNP low V
2.1
1.3
0.4
0.5
1.6
1.7
0.5 (2×)
0.4 (2×)
Dimensions in mm
PBSS5612PA
0.5 (2×)
sot1061_fr
CEsat
0.25
0.25
0.25
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
0.6 (2×)
1.1
1.2
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