PBSS5612PA,115 NXP Semiconductors, PBSS5612PA,115 Datasheet - Page 15

• Manufacturer Part Number: PBSS5612PA,115
• Description: TRANSISTOR PNP 12V 6A SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PBSS5612PA,115

• Package / Case: 3-HUSON
• Mounting Type: Surface Mount
• Power - Max: 2.1W
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 12V
• Transistor Type: PNP
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 60MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 190 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 300mA, 6A
• Dc Collector/base Gain Hfe Min: 130
• Gain Bandwidth Product Ft: 60 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 7 V
• Continuous Collector Current: - 6 A
• Maximum Dc Collector Current: - 7 A
• Power Dissipation: 2.1 W
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063494115

NXP Semiconductors
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
12 V, 6 A PNP low V
PBSS5612PA
CEsat
Document identifier: PBSS5612PA
(BISS) transistor
Date of release: 7 May 2010
All rights reserved.