PBSS5612PA,115 NXP Semiconductors, PBSS5612PA,115 Datasheet - Page 12

• Manufacturer Part Number: PBSS5612PA,115
• Description: TRANSISTOR PNP 12V 6A SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PBSS5612PA,115

• Package / Case: 3-HUSON
• Mounting Type: Surface Mount
• Power - Max: 2.1W
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 12V
• Transistor Type: PNP
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 60MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 190 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 300mA, 6A
• Dc Collector/base Gain Hfe Min: 130
• Gain Bandwidth Product Ft: 60 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 7 V
• Continuous Collector Current: - 6 A
• Maximum Dc Collector Current: - 7 A
• Power Dissipation: 2.1 W
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063494115

NXP Semiconductors
12. Revision history
Table 9.
PBSS5612PA
Product data sheet
Document ID
PBSS5612PA v.1
Revision history
20100507
Release date
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Rev. 01 — 7 May 2010
12 V, 6 A PNP low V
Change notice
-
PBSS5612PA
Supersedes
-
CEsat
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
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