PBSS5612PA,115 NXP Semiconductors, PBSS5612PA,115 Datasheet - Page 2

• Manufacturer Part Number: PBSS5612PA,115
• Description: TRANSISTOR PNP 12V 6A SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PBSS5612PA,115

• Package / Case: 3-HUSON
• Mounting Type: Surface Mount
• Power - Max: 2.1W
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 12V
• Transistor Type: PNP
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 60MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 190 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 300mA, 6A
• Dc Collector/base Gain Hfe Min: 130
• Gain Bandwidth Product Ft: 60 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 7 V
• Continuous Collector Current: - 6 A
• Maximum Dc Collector Current: - 7 A
• Power Dissipation: 2.1 W
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063494115

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PBSS5612PA
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
Type number Package
PBSS5612PA
Type number
PBSS5612PA
Symbol
V
V
V
I
I
P
I
C
CM
B
CBO
CEO
EBO
tot
Pinning
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
base
emitter
collector
Description
Name
HUSON3 plastic thermal enhanced ultra thin small outline package;
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 7 May 2010
Description
no leads; three terminals; body 2 × 2 × 0.65 mm
Conditions
open emitter
open base
open collector
single pulse;
t
T
p
amb
≤ 1 ms
≤ 25 °C
12 V, 6 A PNP low V
Marking code
A9
Simplified outline
Transparent top view
1
3
[1]
[2]
[3]
[4]
PBSS5612PA
Min
-
-
-
-
-
-
-
-
-
-
2
CEsat
Graphic symbol
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
−12
−12
−7
−6
−7
−600
500
1
1.4
2.1
1
sym013
Version
SOT1061
Unit
V
V
V
A
A
mA
mW
W
W
W
3
2
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