PBSS5612PA,115 NXP Semiconductors, PBSS5612PA,115 Datasheet - Page 6

• Manufacturer Part Number: PBSS5612PA,115
• Description: TRANSISTOR PNP 12V 6A SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PBSS5612PA,115

• Package / Case: 3-HUSON
• Mounting Type: Surface Mount
• Power - Max: 2.1W
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 12V
• Transistor Type: PNP
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 60MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 190 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 300mA, 6A
• Dc Collector/base Gain Hfe Min: 130
• Gain Bandwidth Product Ft: 60 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 7 V
• Continuous Collector Current: - 6 A
• Maximum Dc Collector Current: - 7 A
• Power Dissipation: 2.1 W
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063494115

NXP Semiconductors
7. Characteristics
PBSS5612PA
Product data sheet
Table 7.
T
[1]
Symbol
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25
°
C unless otherwise specified.
Characteristics
Parameter
collector-base
cut-off current
collector-emitter
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter
turn-on voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 7 May 2010
Conditions
V
V
T
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
I
V
I
f = 100 MHz
V
I
C
C
C
C
C
C
C
C
C
C
Bon
Boff
C
E
j
CB
CB
CE
EB
CE
CE
CC
CE
CB
I
I
I
I
= 150 °C
= i
= −0.5 A; I
= −1 A; I
= −1 A; I
= −2 A; I
= −3 A; I
= −4 A; I
= −6 A; I
= −6 A; I
= −1 A; I
= −6 A; I
= −100 mA;
C
C
C
C
= −0.1 A;
= 0.1 A
= −5 V; I
= −9.6 V; I
= −9.6 V; I
= −9.6 V; V
= −2 V
= −2 V; I
= −10 V;
= −10 V;
= −9 V; I
= −0.5 A
= −1 A
= −2 A
= −6 A
e
= 0 A; f = 1 MHz
12 V, 6 A PNP low V
B
B
B
B
B
B
B
B
B
= −50 mA
= −10 mA
= −20 mA
= −30 mA
= −400 mA
= −300 mA
= −300 mA
= −10 mA
= −300 mA
C
B
C
C
= −50 mA
= 0 A
= −2 A
E
E
= −2 A;
BE
= 0 A
= 0 A;
= 0 V
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
PBSS5612PA
Min
-
-
-
-
220
200
190
130
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
-
CEsat
Typ
-
-
-
-
335
320
285
190
−20
−40
−60
−95
−135
−130
−200
33
−0.75 −0.9
−0.95 −1.1
−0.74 −0.9
23
61
84
185
60
245
60
140
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
Max
−100
−50
−100
−100
-
-
-
-
−35
−60
−90
−150
−200
−200
−300
50
-
-
-
-
-
-
-
175
Unit
nA
μA
nA
nA
mV
mV
mV
mV
mV
mV
mV
mΩ
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
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