PBSS5612PA,115 NXP Semiconductors, PBSS5612PA,115 Datasheet - Page 9

• Manufacturer Part Number: PBSS5612PA,115
• Description: TRANSISTOR PNP 12V 6A SOT1061
• Manufacturer: NXP Semiconductors

Specifications of PBSS5612PA,115

• Package / Case: 3-HUSON
• Mounting Type: Surface Mount
• Power - Max: 2.1W
• Current - Collector (ic) (max): 6A
• Voltage - Collector Emitter Breakdown (max): 12V
• Transistor Type: PNP
• Current - Collector Cutoff (max): 100nA
• Frequency - Transition: 60MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 190 @ 2A, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 300mA, 6A
• Dc Collector/base Gain Hfe Min: 130
• Gain Bandwidth Product Ft: 60 MHz
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 7 V
• Continuous Collector Current: - 6 A
• Maximum Dc Collector Current: - 7 A
• Power Dissipation: 2.1 W
• Maximum Operating Frequency: 60 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063494115

NXP Semiconductors
8. Test information
PBSS5612PA
Product data sheet
Fig 14. BISS transistor switching time definition
Fig 15. Test circuit for switching times
90 %
10 %
90 %
10 %
− I
− I
B
C
V
CC
= −9 V; I
All information provided in this document is subject to legal disclaimers.
oscilloscope
t
d
C
t
on
= −2 A; I
V
t
Rev. 01 — 7 May 2010
I
r
(probe)
450 Ω
Bon
= −0.1 A; I
R1
R2
R
Boff
B
V
BB
= 0.1 A
12 V, 6 A PNP low V
R
C
V
CC
DUT
V
o
mgd624
− I
(probe)
450 Ω
Bon
t
− I
s
(100 %)
Boff
PBSS5612PA
t
off
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2010. All rights reserved.
(BISS) transistor
t
f
− I
006aaa266
C
(100 %)
t
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