2N5210_J05Z Fairchild Semiconductor, 2N5210_J05Z Datasheet - Page 3

• Manufacturer Part Number: 2N5210_J05Z
• Description: TRANSISTOR NPN 50V 100MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5210_J05Z

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 100µA, 5V
• Power - Max: 625mW
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Typical Characteristics
1200
1000
1.0
0.8
0.6
0.4
0.2
800
600
400
200
0.1
0
0.01
Typical Pulsed Current Gain
Voltage vs Collector Current
Base-Emitter Saturation
0.03
vs Collector Current
I
C
I
C
- COLLECTO R CURRENT (mA)
- COLLECTOR CURRENT (m A)
0.1
125
25
o
1
o
C
C
- 40
0.3
25
o
o
C
C
1
- 40
125
0.1
10
3
1
o
o
10
25
C
C
10
V
CB
V
vs Ambient Temperature
Collector-Cutoff Current
C E
= 45V
= 10
T - AMBIE NT TEMP ERATURE ( C)
50
30
= 5.0V
A
100
100
75
100
0.30
0.25
0.20
0.15
0.10
0.05
1.0
0.8
0.6
0.4
0.2
0.1
0.1
NPN General Purpose Amplifier
Voltage vs Collector Current
Collector-Emitter Saturation
Base-Emitter ON Voltage vs
= 10
125
°
- 40
I
I
C
C
Collector Current
- COLLECTO R CURRENT (m A)
- COLLECTOR CURR EN T (m A)
o
C
150
1
25
1
o
C
25
125
o
C
o
C
10
125
o
10
V
C
- 40
C E
= 5.0V
(continued)
o
C
100