2N5210_J05Z Fairchild Semiconductor, 2N5210_J05Z Datasheet - Page 4

• Manufacturer Part Number: 2N5210_J05Z
• Description: TRANSISTOR NPN 50V 100MA TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of 2N5210_J05Z

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 100µA, 5V
• Power - Max: 625mW
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Typical Characteristics
1000
10
100
0.0001
Normalized Collector-Cutoff Current
5
4
3
2
1
0
10
8
6
4
2
0
1
0
25
C te
Input and Output Capacitance
Noise Figure vs Frequency
vs Ambient Temperature
0.001
vs Reverse Bias Voltage
T - AMBIE NT TEMPERATURE ( C)
4
50
A
REVERSE BIAS VOLTAGE (V)
f - FREQUENCY (MHz)
0.01
75
8
I
R
I = 1.0 mA,
R = 5.0 k
C
C
S
I
R
S
= 1.0 mA,
C
= 500
S
0.1
I
R
= 100 A,
C
= 10 k
S
= 200 A,
= 10 k
100
12
1
(continued)
f = 1.0 MHz
125
V
°
C ob
16
CE
10
= 5.0V
150
100
20
5
4
3
2
1
0
1,000
10
1.00
0.75
0.50
0.25
0.00
7
5
3
2
1
0.1
0
NPN General Purpose Amplifier
Voltage vs Collector Current
SOT-23
Wideband Noise Frequency
TO-92
2,000
Contours of Constant Gain
Base-Emitter Saturation
Bandwidth Product (f )
vs Source Resistance
25
R
I - COLLECTOR CURRENT (mA)
C
S
- SOURCE RESISTANCE ( )
V
BANDWIDTH = 15.7 kHz
5,000
TEMPERATURE (
1
CE
50
= 5.0 V
10,000
125 MHz
100 MHz
75 MHz
75
150 MHz
I
C
175 MHz
= 100 A
20,000
10
100
o
C)
I
T
I
C
C
50,000
= 10 A
= 30 A
125
(continued)
100,000
100
150
3