PBRP113ES,126 NXP Semiconductors, PBRP113ES,126 Datasheet - Page 56

• Manufacturer Part Number: PBRP113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059135126; PBRP113ES AMO; PBRP113ES AMO

RF
Pin diodes
Pin-diode packaging
Types in bold indicate new product
These are NXP preferred types only. For a complete overview of our portfolio please visit: www.nxp.com/pindiodes
56
SOD323
BAP50-03
BAP51-03
BAP63-03
BAP64-03
BAP65-03
BAP70-03
BAP1321-03
Product
BAP50
BAP51
BAP63
BAP64
BAP65
BAP70
BAP1321
SOD523
BAP50-02
BAP51-02
BAP63-02
BAP64-02
BAP65-02
BAP70-02
BAP1321-02
Package
Various
Various
Various
Various
Various
Various
Various
Single
SOD882T
BAP50LX
BAP51LX
BAP63LX
BAP64LX
BAP65LX
BAP70LX
BAP1321LX
Vr (V)
175
50
60
50
30
50
60
Limits
SOT23
BAP50-04
BAP64-04
BAP1321-04
If (mA)
100
100
100
100
100
50
50
Series
SOT323
BAP50-04W
BAP51-04W
BAP64-04W
BAP70-04W
0.5 mA
5.5
2.5
3.4
25
20
77
SOT23
BAP50-05
BAP64-05
BAP65-05
BAP70-05
RD (Ω) typ @
1 mA
1.95
3.6
2.4
14
10
40
1
Common cathode
SOT323
BAP50-05W
BAP51-05W
BAP63-05W
BAP64-05W
BAP65-05W
10 mA
1.17
0.56
1.5
5.4
1.2
3
2
SOT23
BAP64-06
0.36
0.48
0.65
0.57
0 V
0.4
0.4
0.4
Common anode
SOT323
BAP51-06W
BAP64-06W
Cd (pF) typ @
0.32
0.35
0.55
0.35
1 V
0.3
0.3
0.4
SOT363
BAP70AM
Anti-parallel
0.22 @ 5 V
0.2 @ 5 V
0.375
20 V
0.25
0.23
0.25
0.2