PBRP113ES,126 NXP Semiconductors, PBRP113ES,126 Datasheet - Page 90

• Manufacturer Part Number: PBRP113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059135126; PBRP113ES AMO; PBRP113ES AMO

Small-signal discretes
BISS RETs (new)
Low-V
90
Package
Size (mm)
Configuration
Configuration
Package
P
tot
Polarity
max
I
C
NPN
NPN
NPN
NPN
PNP
PNP
PNP
PNP
F
max (A)
0.5
1.0
2.0
2.0
3.0
0.5
1.0
2.0
2.0
3.0
(MEGA) Schottky rectifiers / Low V
I
C
800
800
800
800
800
800
800
800
V
(mA)
CEO
Transistor
15
40
40
40
40
15
40
40
40
40
max (V)
V
CEO
50
50
50
50
50
50
50
50
(V)
R
CEsat
(mΩ)
500
220
190
190
130
500
340
280
280
135
CEsat
max
R1 = R2
R1 = R2
R1 = R2
R1 = R2
R1 ≠ R2
R1 ≠ R2
R1 ≠ R2
R1 ≠ R2
(BISS) transistor modules
I
F
max (A)
0.5
0.5
1
1
1
1
1
1
1
1
R1 (kΩ)
2.2
2.2
2.2
2.2
1
1
1
1
Schottky rectifier
V
R
max (V)
20
20
20
40
40
20
20
20
40
40
R2 (kΩ)
2.2
2.2
10
10
10
10
1
1
V
F
max (mV)
390
550
550
640
500
390
550
550
640
500
PBRN123EK
PBRN113ZK
PBRN123YK
SOT346 (SC-59A)
250 mW
PMEM4030NS
PMEM4030PS
4.9 x 3.9 x 1.75
SOT96 (SO8)
1000 mW
NPN
PNP
PBRN123ET
PBRN113ZT
PBRN123YT
PMEM4010ND
PMEM4020ND
PMEM4020AND
PMEM4010PD
PMEM4020PD
PMEM4020APD
250 mW
SOT23
SOT457 (SC-74)
2.9 x 1.5 x 1.0
500 mW
NPN
PNP
P
tot
PBRN113ES
PBRN123ES
PBRN113ZS
PBRN123YS
PBRP113ES
PBRP123ES
PBRP113ZS
PBRP123YS
PMEM1505NG
PMEM1505PG
SOT54 (TO-92)
SOT353 (SC-88A)
2.1 x 1.25 x 0.95
500 mW
250 mW
NPN
PNP