PBRP113ES,126 NXP Semiconductors, PBRP113ES,126 Datasheet - Page 87

• Manufacturer Part Number: PBRP113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059135126; PBRP113ES AMO; PBRP113ES AMO

MOSFET driver transistors (new)
Package
P
Contains
General-purpose transistors
General-purpose transistors
General-purpose transistors
General-purpose transistors
Switching transistors -
reduced storage time
Switching transistors -
reduced storage time
Low V
Low V
Low V
Low V
tot
CEsat
CEsat
CEsat
CEsat
(BISS) transistors -
high h
(BISS) transistors -
high h
FE
FE
and I
and I
C
C
I
0.1
0.1
0.1
0.1
0.6
0.6
1.0
1.0
C
(A)
I
0.2
0.2
0.2
0.2
1.2
1.2
2.0
2.0
CM
(A)
SOT457 (SC-74)
600 mW
PMD9050D
SOT346 (SC-59A)
250 mW
PMD4001K (NPN)
PMD5001K (PNP)
PMD4002K (NPN)
PMD5002K (PNP)
PMD4003K (NPN)
PMD5003K (PNP)
SOT457 (SC-74)
600 mW
R1 = R2 (kΩ)
2.2
4.7
10
PMD9010D
PMD9001D
PMD9002D
PMD9003D
SOT457 (SC-74)
600 mW
BCV65 (SOT143B)
PMD2001D
PMD3001D
7