PBRP113ES,126 NXP Semiconductors, PBRP113ES,126 Datasheet - Page 86

• Manufacturer Part Number: PBRP113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059135126; PBRP113ES AMO; PBRP113ES AMO

Small-signal discretes
Matched-pair transistors (new)
50-V, 500-mA RETs (new)
6
(1)
Packages
P
Polarity
NPN
NPN
NPN
NPN
PNP
PNP
PNP
PNP
Package
P
I
tot
tot
C1
/I
E2
R1 (kΩ)
1.0
2.2
1.0
2.2
2.2
I
C
100
100
100
100
100
100
100
100
(mA)
R1 = R2
R1 ≠ R2
Only R1
V
CEO
30
45
45
45
30
45
45
45
(V)
h
FE
R2 (kΩ)
110
200
200
200
110
200
200
200
1.0
2.2
10
10
min
h
FE
800
450
450
450
800
450
450
450
max
PDTD113EK
PDTD123EK
PDTD113ZK
PDTD123YK
PDTD123TK
h
FE1
0.7
0.9
0.7
0.9
0.95
0.98
0.95
0.98
/h
(1)
(1)
(1)
(1)
FE2
NPN
V
SOT346 (SC-59A)
BE1
-V
250 mW
NA
NA
BE2
2
2
2
2
2
2
(mV) 2.9 x 1.3 x 1.0
PDTB113EK
PDTB123EK
PDTB113ZK
PDTB123YK
PDTB123TK
SOT143B
250 mW
BCV61/A/B/C
BCM61B
BCV62/A/B/C
BCM62B
PNP
SOT457 (SC-74)
380 mW
2.9 x 1.5 x 1.0
BCM847DS
BCM857DS
PDTD113ET
PDTD123ET
PDTD113ZT
PDTD123YT
PDTD123TT
NPN
SOT353 (SC-88A)
300 mW
2.0 x 1.25 x 0.95
PMP4501G
PMP4201G
PMP5501G
PMP5201G
250 mW
SOT23
PDTB113ET
PDTB123ET
PDTB113ZT
PDTB123YT
PDTB123TT
PNP
SOT363 (SC-88)
300 mW
2.0 x 1.25 x 0.95
BCM847BS
BCM857BS
PDTD113ES
PDTD123ES
PDTD113ZS
PDTD123YS
PDTD123TS
PMP4501Y
PMP4201Y
PMP5501Y
PMP5201Y
NPN
SOT54 (TO-92)
500 mW
SOT666
300 mW
1.6 x 1.2 x 0.55
BCM847BV
BCM857BV
PDTB113ES
PDTB123ES
PDTB113ZS
PDTB123YS
PDTB123TS
PNP
PMP4501V
PMP4201V
PMP5501V
PMP5201V