PBRP113ES,126 NXP Semiconductors, PBRP113ES,126 Datasheet - Page 62

• Manufacturer Part Number: PBRP113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059135126; PBRP113ES AMO; PBRP113ES AMO

RF
N-channel, dual-gate MOSFETs for switching
6
Product
With external bias
BF998
BF998R
BF998WR
Fully internal bias
BF1105
BF1105R
BF1105WR
Partly internal bias
BF904(A)
BF904(A)R
BF904(A)WR
BF909(A)
BF909(A)R
BF909(A)WR
BF1102(R)
BF1201
BF1201R
BF1201WR
BF1202
BF1202R
BF1202WR
Package
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT343
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
V
(V)
12
12
12
10
10
10
10
10
10
7
7
7
7
7
7
7
7
7
7
DS
(mA)
30
30
30
30
30
30
30
30
30
40
40
40
40
30
30
30
30
30
30
I
D
Min
12
12
12
12
11
11
11
2
2
2
8
8
8
8
8
8
8
8
8
(mA)
I
DSS
Max
18
18
18
16
16
16
13
13
13
20
20
20
20
19
19
19
16
16
16
Min
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
(p)GS
(V)
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
Max
-2.0
-2.0
-2.5
1
1
1
1
1
1
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
Min
21
21
22
25
25
25
22
22
22
36
36
36
36
23
23
23
25
25
25
Characteristics
(mS)
|Yfs|
Max
30
30
30
50
50
50
35
35
35
40
40
40
2.2
2.2
2.2
2.8
(pF)
Cis
Typ
2.1
2.1
2.1
2.2
2.2
2.2
3.6
3.6
3.6
2.6
2.6
2.6
1.7
1.7
1.7
(3)
(3)
(3)
(3)
1.2
1.2
1.2
1.6
1.05
1.05
1.05
0.85
0.85
0.85
Cos
(pF)
Typ
1.3
1.3
1.3
2.3
2.3
2.3
0.9
0.9
0.9
(2)
(2)
(2)
(2)
F @ 800
MHz
Typ
1.7
1.7
1.7
1.9
1.9
1.9
1.1
1.1
1.1
1
1
1
2
2
2
2
2
2
2
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