PBRP113ES,126 NXP Semiconductors, PBRP113ES,126 Datasheet - Page 61

• Manufacturer Part Number: PBRP113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059135126; PBRP113ES AMO; PBRP113ES AMO

N-channel junction field-effect transistors (FETs)
N-channel, single MOSFETs for switching
These are NXP preferred types only. For a complete overview of our portfolio please visit: www.nxp.com/fets
(1)
Product
BSS83
Silicon RF switches
BF1107
BF1108
BF1108R
Product
Preamplifiers for AM tuners in car radios
BF861A
BF861B
BF861C
BF862
AM input stages for UHF/VHF amplifiers
PMBFJ310
PMBFJ620
V
GS (th)
(4)
(2)
(4)
I
D
(3)
V
SG
Package
SOT143
SOT23
SOT143B
SOT143R
(4)
Depletion FET plus diode in one package
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT363
V
(V)
10
3
3
3
DS
V
(V)
25
25
25
20
25
25
DS
mA
50
10
10
10
I
D
Min
(mA)
(mA)
10
10
10
10
50
50
I
I
G
DSS
100
100
100
Max
(2)
(2)
(2)
0.1
Min
Min
12
10
24
24
2
6
(1)
V
(p)GS
(mA)
I
DSS
Max
7
7
7
2
(3)
(3)
(3)
Max
6.5
15
25
25
60
60
R
Max
DSON
(Ω)
45
20
20
20
Min
Min
0.2
0.5
0.8
2
2
typ 0.6
Characteristics
(pF)
Crs
Characteristics
V
< 20
Max
(p)GS
(V)
Max
1.5
6.5
6.5
1
2
Typ
(ns)
t
on
Max
1
Min
12
16
20
35
Typ
> 10
> 10
(mS)
|Yfs|
(ns)
t
off
Max
Max
20
25
30
5
|S
Max
21(on)
(dB)
2.5
3
3
1.9 typ
|
Min
2
2.1
2.1
2.1
1.3
1.3
|S
21(off)
(dB)
Min
(pF)
30
30
30
Crs
|
2
Max
2.7
2.7
2.7
2.5
2.5
Mode
enh.
depl.
depl.
depl.
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