PBRP113ES,126 NXP Semiconductors, PBRP113ES,126 Datasheet - Page 67

• Manufacturer Part Number: PBRP113ES,126
• Description: TRANS PNP W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PBRP113ES,126

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 800mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059135126; PBRP113ES AMO; PBRP113ES AMO

Dual fractional-N PLL synthesizer
These are NXP preferred types only. For a complete overview of our portfolio please visit: www.nxp.com/rf
RF/IF mixers with VCO
(1)
SA8027
Product
SA601
SA620
SA612A/01
SA602A/01
GSM f
REF
DH
(TSSOP20)
= 13 MHz (TCXO), fCOMP = 1 MHz, f
Package
DK (SSOP20)
DK (SSOP20)
D (SO8)
N (DIP8)
D (SO8)
N (DIP8)
2.7 to 3.6
V
CC
2.7 to 5.5
2.7 to 5.5
4.5 to 8.0
4.5 to 8.0
range (V)
operating
7.7
RF
= 900 MHz, 1-kHz offset (dBc/Hz)
1
I
CC
(mA)
10.4
7.4
2.8
2.8
max
350 /
2500
frequency typ (MHz)
-18 / 0
800-1200
800-1200
RF input
Main VCO
500
500
(2)
65535
512 /
TDMA f
REF
LO frequency
= 19.44 MHz (TCXO), fCOMP = 240 kHz
4
typ (MHz)
1200
1200
200
200
100 / 550
min/typ/max (dB)
14.5 / 16 / 17.5
-15 / 0
18 / 19.5 / 21
Mixer gain
14 / 17 /–
14 / 17 /–
16383
128 /
Auxiliary VCO
S21 typ (dB)
LNA gain
5 / 40
No LNA
No LNA
11.5
11.5
360 /
1300
order intercept IIP3 typ/max (dBm)
4 / 1023
LNA input third-
-2.0 / -0.5
-3.0 / -1.5
No LNA
No LNA
-90
GSM
Synthesizer phase noise
(1)
-83
LNA noise figure
-85
typ/max (dB)
TDMA
1.6 / 1.9
1.6 / 1.9
No LNA
No LNA
(2)
-77
67