M368L6423FTNCB3 Samsung Semiconductor, M368L6423FTNCB3 Datasheet - Page 12

• Manufacturer Part Number: M368L6423FTNCB3
• Manufacturer: Samsung Semiconductor

Specifications of M368L6423FTNCB3

• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.72A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Not Compliant

9.0 DDR SDRAM IDD spec table
9.1 M368L1624FT(U) [ (16M x 16) * 4, 128MB Non ECC Module ]
9.2 M368L3223FT(U) [ (32M x 8) * 8, 256MB Non ECC Module ]
128MB, 256MB, 512MB Unbuffered DIMM
IDD6
IDD6
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
Symbol
IDD4W
IDD4W
IDD2Q
IDD3N
IDD4R
IDD2P
IDD2Q
IDD3P
IDD3N
IDD4R
IDD7A
IDD2P
IDD2F
IDD3P
IDD7A
IDD2F
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
Low power
Low power
Normal
Normal
CC(DDR400@CL=3)
CC(DDR400@CL=3)
1,040
1,480
1,760
1,600
2,800
1,000
1,520
840
240
200
440
600
440
600
120
100
220
300
880
800
35
24
12
16
12
6
B3(DDR333@CL=2.5)
B3(DDR333@CL=2.5)
1,280
1,280
1,360
2,240
1,400
720
920
240
200
280
440
360
500
100
140
220
800
760
720
24
24
12
12
12
80
6
Rev. 1.3 July 2005
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
DDR SDRAM
(V
(V
DD
DD
=2.7V, T = 10°C)
=2.7V, T = 10°C)
Optional
Optional
Notes
Notes