M368L6423FTNCB3 Samsung Semiconductor, M368L6423FTNCB3 Datasheet - Page 14

• Manufacturer Part Number: M368L6423FTNCB3
• Manufacturer: Samsung Semiconductor

Specifications of M368L6423FTNCB3

• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.72A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Not Compliant

9.5 M381L6423FT(U) [ (32M x 8) * 18, 512MB ECC Module ]
128MB, 256MB, 512MB Unbuffered DIMM
IDD6
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
IDD4W
IDD2Q
IDD3N
IDD4R
IDD2P
IDD2F
IDD3P
IDD7A
IDD0
IDD1
IDD5
Low power
Normal
CC (DDR400@CL=3)
1,620
1,850
1,350
2,340
2,660
2,480
3,830
540
450
990
75
54
27
B3 (DDR333@CL=2.5)
1,310
1,530
1,940
1,940
2,030
3,020
540
450
630
990
54
54
27
Rev. 1.3 July 2005
DDR SDRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
(V
DD
=2.7V, T = 10°C)
Optional
Notes