M368L6423FTNCB3 Samsung Semiconductor, M368L6423FTNCB3 Datasheet - Page 13

• Manufacturer Part Number: M368L6423FTNCB3
• Manufacturer: Samsung Semiconductor

Specifications of M368L6423FTNCB3

• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.72A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Not Compliant

9.3 M381L3223FT(U) [ (32M x 8) * 9, 256MB ECC Module ]
9.4 M368L6423FT(U) [ (32M x 8) * 16, 512MB Non ECC Module ]
128MB, 256MB, 512MB Unbuffered DIMM
IDD6
IDD6
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Symbol
IDD4W
Symbol
IDD2P
IDD2Q
IDD3P
IDD3N
IDD4R
IDD7A
IDD2F
IDD4W
IDD2Q
IDD3N
IDD4R
IDD2P
IDD2F
IDD3P
IDD7A
IDD0
IDD1
IDD5
IDD0
IDD1
IDD5
Low power
Low power
Normal
Normal
CC(DDR400@CL=3)
CC(DDR400@CL=3)
1,170
1,670
1,980
1,800
3,150
950
270
230
500
680
1,440
1,640
1,200
2,080
2,360
2,200
3,400
40
27
14
480
400
880
65
48
24
B0(DDR333@CL=2.5)
B0(DDR333@CL=2.5)
1,035
1,440
1,440
1,530
2,520
810
270
225
320
500
1,160
1,360
1,720
1,720
1,800
2,680
27
27
14
480
320
560
880
48
48
24
Rev. 1.3 July 2005
Unit
DDR SDRAM
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
(V
(V
DD
DD
=2.7V, T = 10°C)
=2.7V, T = 10°C)
Optional
Optional
Notes
Notes