M368L6423FTNCB3 Samsung Semiconductor, M368L6423FTNCB3 Datasheet - Page 4

• Manufacturer Part Number: M368L6423FTNCB3
• Manufacturer: Samsung Semiconductor

Specifications of M368L6423FTNCB3

• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.72A
• Number Of Elements: 16
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Not Compliant

1.0 Ordering Information
Note : Leaded and Lead-free(Pb-free) can be discriminated by PKG P/N (T : 66 TSOP with Leaded, U : 66 TSOP with Lead-free)
2.0 Operating Frequencies
3.0 Feature
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQ] (x4,x8) & [L(U)DQS] (x16)
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• Programmable Read latency : DDR333(2.5 Clock), DDR400(3 Clock)
• Programmable Burst length (2, 4, 8)
• Programmable Burst type (sequential & interleave)
• Edge aligned data output, center aligned data input
• Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
• Serial presence detect with EEPROM
• PCB : Height 1,250 (mil) & single (128MB, 256MB), double (512GB) sided
• SSTL_2 Interface
• 66pin TSOP II
128MB, 256MB, 512MB Unbuffered DIMM
M368L1624FT(U)M-C(L)CC/B3
M381L3223FT(U)M-C(L)CC/B3
M381L6423FT(U)M-C(L)CC/B3
M368L3223FT(U)N-C(L)CC/B3
M368L6423FT(U)N-C(L)CC/B3
Speed @CL2.5
CL-tRCD-tRP
Speed @CL2
Speed @CL3
Part Number
Leaded & Pb-Free(RoHS compliant)
184Pin Unbuffered DIMM based on 256Mb F-die (x8, x16)
Density
128MB
256MB
512MB
CC(DDR400@CL=3)
package
166MHz
200MHz
3-3-3
-
Organization
16M x 64
32M x 64
32M x 72
64M x 64
64M x 72
16Mx16 (K4H561638F) * 4EA
32Mx8 (K4H560838F) * 8EA
32Mx8 (K4H560838F) * 9EA
32Mx8 (K4H560838F) * 16EA
32Mx8 (K4H560838F) * 18EA
Component Composition
B3(DDR333@CL=2.5)
Rev. 1.3 July 2005
133MHz
166MHz
2.5-3-3
-
DDR SDRAM
1,250mil
1,250mil
1,250mil
1,250mil
1,250mil
Height