MOC217R2M Fairchild Semiconductor, MOC217R2M Datasheet - Page 2

Transistor Output Optocouplers 8-Pin Optocoupler Phototransistor

MOC217R2M

Manufacturer Part Number
MOC217R2M
Description
Transistor Output Optocouplers 8-Pin Optocoupler Phototransistor
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MOC217R2M

Input Type
DC
Output Type
DC
Output Device
Transistor With Base
Number Of Elements
1
Reverse Breakdown Voltage
6V
Forward Voltage
1.3V
Forward Current
60mA
Collector-emitter Voltage
30V
Package Type
SOIC W
Collector Current (dc) (max)
150mA
Isolation Voltage
2500Vrms
Power Dissipation
250mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
8
Mounting
Surface Mount
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Configuration
1 Channel
Maximum Collector Emitter Voltage
30 V
Maximum Collector Emitter Saturation Voltage
0.4 V
Maximum Forward Diode Voltage
1.3 V
Maximum Collector Current
150 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Package / Case
SOIC-8 Narrow
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
6 V
Lead Free Status / Rohs Status
Compliant

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©2005 Fairchild Semiconductor Corporation
MOC215M, MOC216M, MOC217M Rev. 1.0.1
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Notes:
1. Isolation Surge Voltage, V
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
EMITTER
DETECTOR
TOTAL DEVICE
Symbol
I
V
V
V
F
V
T
V
P
P
P
CEO
CBO
ECO
T
I
I
(pk)
ISO
stg
F
C
A
R
D
D
D
Forward Current – Continuous
Forward Current – Peak (PW = 100µs, 120pps)
Reverse Voltage
LED Power Dissipation @ T
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Collector Current-Continuous
Detector Power Dissipation @ T
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.)
Total Device Power Dissipation @ T
Ambient Operating Temperature Range
Storage Temperature Range
Derate above 25°C
Derate above 25°C
Derate above 25°C
ISO
, is an internal device dielectric breakdown rating.
(T
A
= 25°C Unless otherwise specified)
Rating
A
= 25°C
A
= 25°C
A
= 25°C
2
(1)(2)
-40 to +100
-40 to +125
Value
2500
1.76
2.94
150
150
250
1.0
6.0
0.8
7.0
60
90
30
70
Vac(rms)
www.fairchildsemi.com
mW/°C
mW/°C
mW/°C
Unit
mW
mW
mW
mA
mA
°C
°C
A
V
V
V
V

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