MOC217R2M Fairchild Semiconductor, MOC217R2M Datasheet - Page 3

• Manufacturer Part Number: MOC217R2M
• Description: Transistor Output Optocouplers 8-Pin Optocoupler Phototransistor
• Manufacturer: Fairchild Semiconductor

Specifications of MOC217R2M

• Input Type: DC
• Output Type: DC
• Output Device: Transistor With Base
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.3V
• Forward Current: 60mA
• Collector-emitter Voltage: 30V
• Package Type: SOIC W
• Collector Current (dc) (max): 150mA
• Isolation Voltage: 2500Vrms
• Power Dissipation: 250mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 8
• Mounting: Surface Mount
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Maximum Forward Diode Voltage: 1.3 V
• Maximum Collector Current: 150 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SOIC-8 Narrow
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Lead Free Status / Rohs Status: Compliant

©2005 Fairchild Semiconductor Corporation
MOC215M, MOC216M, MOC217M Rev. 1.0.1
Electrical Characteristics
*Typical values at T
Notes:
1. Isolation Surge Voltage, V
2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common.
3. V
4. Current Transfer Ratio (CTR) = I
EMITTER
DETECTOR
COUPLED
Symbol
V
BV
BV
I
CTR
CE(sat)
V
R
C
C
CEO
t
t
ISO
V
I
C
ISO
ISO
ISO
on
off
t
t
CEO
ECO
CE
R
r
f
F
rating of 2500 V
Forward Voltage
Reverse Leakage Current
Capacitance
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Capacitance
Output Collector Current
Collector-Emitter Saturation Voltage
Turn-On Time
Turn-Off Time
Rise Time
Fall Time
Input-Output Isolation Voltage
Isolation Resistance
Isolation Capacitance
MOC215M
MOC216M
MOC217M
A
= 25°C
Characteristic
AC(rms)
ISO
(2)
for t = 1 min. is equivalent to a rating of 3,000 V
(2)
, is an internal device dielectric breakdown rating.
(4)
C
/I
(T
F
A
x 100%.
(1)(2)(3)
= 25°C unless otherwise specified)
I
V
V
V
I
I
f = 1.0MHz, V
I
I
I
R
I
R
I
R
I
R
f = 60 Hz, t = 1.0 min.
V
V
F
C
E
F
C
C
C
C
C
R
CE
CE
I-O
I-O
L
L
L
L
= 1.0mA
= 1.0mA, V
= 100µA
= 100µA
= 100µA, I
= 2.0mA, V
= 2.0mA, V
= 2.0mA, V
= 2.0mA, V
= 100 , (Fig. 10)
= 100
= 100
= 100
= 6.0V
= 5.0V, T
= 5.0V, T
= 500V
= 0, f = 1.0MHz
Test Conditions
3
(Fig. 10)
(Fig. 10)
(Fig. 10)
F
A
A
CE
CE
CC
CC
CC
CC
= 1.0mA
= 25°C
= 100°C
= 5.0V
= 0
= 10V,
= 10V,
= 10V,
= 10V,
AC(rms)
Min.
2500
10
100
7.0
30
20
50
for t = 1 sec.
11
Typ.*
0.001
1.07
100
1.0
1.0
7.0
4.0
4.0
3.0
3.0
0.2
18
10
Max.
100
1.3
0.4
50
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Vac(rms)
Unit
µA
nA
µA
pF
pF
pF
µs
µs
µs
µs
%
V
V
V
V