MT47H512M8WTR-3:C Micron Technology Inc, MT47H512M8WTR-3:C Datasheet
MT47H512M8WTR-3:C
Specifications of MT47H512M8WTR-3:C
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MT47H512M8WTR-3:C Summary of contents
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TwinDie™ DDR2 SDRAM MT47H1G4 – 64 Meg Banks x 2 Ranks MT47H512M8 – 32 Meg Banks x 2 Ranks Features • Uses 2Gb Micron die • Two ranks (includes dual CS#, ODT, ...
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Ball Assignments and Descriptions Figure 1: 63-Ball FBGA – x4, x8 Ball Assignments (Top View NF, NU/RDQS NF, DQ6 C V DDQ D NF, DQ4 E V DDL F G BA2 H CKE1 J V ...
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... Address inputs: Provide the row address for ACTIVATE commands, and the column ad- dress and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE com- mand determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH) ...
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Table 3: FBGA 63-Ball Descriptions (Continued) Symbol Type Description RDQS, RDQS# I/O Redundant data strobe: For the x8 configuration only. RDQS is enabled/disabled via the load mode command to the extended mode register (EMR). When RDQS is enabled, RDQS is ...
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Functional Description The 4Gb (TwinDie) DDR2 SDRAM is a high-speed, CMOS dynamic random access mem- ory device containing 4,294,967,296 bits and internally configured as two 8-bank 2Gb DDR2 SDRAM devices. Although each die is tested individually within the dual-die package, ...
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Functional Block Diagrams Figure 2: 64 Meg Banks x 2 Ranks CS1# RAS# CKE1 CAS# ODT1 WE# PDF: 09005aef8227ee4d mt47h1g_64m_32m_twindie.pdf - Rev. H 04/11 EN 4Gb: x4, x8 TwinDie DDR2 SDRAM Rank 1 (64 Meg x ...
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Figure 3: 32 Meg Banks x 2 Ranks CS1# RAS# CKE1 CAS# ODT1 WE# PDF: 09005aef8227ee4d mt47h1g_64m_32m_twindie.pdf - Rev. H 04/11 EN 4Gb: x4, x8 TwinDie DDR2 SDRAM Rank 1 (32 Meg ...
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Electrical Specifications – Absolute Ratings Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other condi- tions oustide those indicated in ...
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Table 5: Temperature Limits Parameter Storage temperature Operating temperature: commercial Notes: 1. MAX storage case temperature T 2. MAX operating case temperature T 3. Device functionality is not guaranteed if the device exceeds maximum T Figure 4: Example Temperature Test ...
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Electrical Specifications – I Table 7: DDR2 I Specifications and Conditions (Die Revision A) DD Notes: 1–8 apply to the entire table Parameter/Condition Operating one bank active-precharge current ...
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Table 7: DDR2 I Specifications and Conditions (Die Revision A) (Continued) DD Notes: 1–8 apply to the entire table Parameter/Condition Operating burst read current: All banks open, continu- ous burst reads, Iout = 0mA ...
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Table 8: DDR2 I Specifications and Conditions (Die Revision C) DD Notes: 1–8 apply to the entire table Parameter/Condition Operating one bank active-precharge current RAS = RAS MIN (I ...
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Table 8: DDR2 I Specifications and Conditions (Die Revision C) (Continued) DD Notes: 1–8 apply to the entire table Parameter/Condition Operating burst read current: All banks open, continuous burst reads, Iout = 0mA ...
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PDF: 09005aef8227ee4d mt47h1g_64m_32m_twindie.pdf - Rev. H 04/11 EN Electrical Specifications – I When I and I must be derated by 4%; I DD2P DD3P(SLOW) ≤ 0° 2%; and I and I T DD6 C When ...
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Package Dimensions Figure 5: 63-Ball FBGA (12mm x 14mm) (THM) Seating plane A 0.12 A 63X Ø0.45 Solder ball material: SAC305. Dimensions apply solder balls post-reflow on Ø0.33 NSMD ball pads. 8 CTR 0.8 TYP 0.8 ...
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Figure 6: 63-Ball FBGA (9mm x 11.5mm) (WTR) Seating plane A 0.12 A 63X Ø0.45 Solder ball material: SAC305. Dimensions apply to solder balls post-reflow on Ø0.33 NSMD ball pads. 8 CTR 0.8 TYP 0.8 TYP 6.4 ...