MT47H512M8WTR-3:C Micron Technology Inc, MT47H512M8WTR-3:C Datasheet - Page 8

• Manufacturer Part Number: MT47H512M8WTR-3:C
• Description: IC DDR2 SDRAM 4GBIT 63FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H512M8WTR-3:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 4G (512M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 63-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications – Absolute Ratings
Table 4: Absolute Maximum DC Ratings
Temperature and Thermal Impedance
PDF: 09005aef8227ee4d
mt47h1g_64m_32m_twindie.pdf - Rev. H 04/11 EN
Parameter
V
V
V
Voltage on any ball relative to V
Input leakage current; any input 0V ≤ V
all other balls not under test = 0V
Output leakage current; 0V ≤ V
and ODT disabled
V
DD
DDQ
DDL
REF
supply voltage relative to V
leakage current; V
supply voltage relative to V
supply voltage relative to V
Notes:
REF
= valid V
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions oustide those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
the following table, be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in maintain-
ing the proper junction temperature is using the device’s thermal impedances correct-
ly. The thermal impedances are listed in Table 6 (page 9)for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications,” prior to using the thermal impedances
listed below. For designs that are expected to last several years and require the flexibili-
ty to use several DRAM die shrinks, consider using final target theta values (rather than
existing values) to account for increased thermal impedances from the die size reduction.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
ature is too high, use of forced air and/or heat sinks may be required in order to satisfy
the case temperature specifications.
1. V
2. V
3. Voltage on any I/O may not exceed voltage on V
OUT
SS
SS
SSL
SSQ
C
quired when power is ramping down.
REF
≤ V
DD
REF
specification is not exceeded. In applications where the device’s ambient temper-
, V
level
DDQ
≤ 0.6 x V
IN
DDQ
≤ V
; DQ
, and V
DD
DDQ
;
; however, V
DDL
V
Symbol
must be within 300mV of each other at all times; this is not re-
IN
V
V
I
V
VREF
, V
I
DDQ
DDL
OZ
I
DD
I
Electrical Specifications – Absolute Ratings
OUT
8
REF
may be ≥ V
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Min
1.0
0.5
0.5
0.5
10
10
4
4Gb: x4, x8 TwinDie DDR2 SDRAM
DDQ
provided that V
DDQ
Max
2.3
2.3
2.3
2.3
10
10
.
4
© 2006 Micron Technology, Inc. All rights reserved.
REF
Units
µA
µA
µA
V
V
V
V
≤ 300mV.
Notes
1, 2
1
1
3