MT47H512M8WTR-3:C Micron Technology Inc, MT47H512M8WTR-3:C Datasheet - Page 9

• Manufacturer Part Number: MT47H512M8WTR-3:C
• Description: IC DDR2 SDRAM 4GBIT 63FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H512M8WTR-3:C

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 4G (512M x 8)
• Speed: 3ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 63-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 5: Temperature Limits
Figure 4: Example Temperature Test Point Location
Table 6: Thermal Impedance
PDF: 09005aef8227ee4d
mt47h1g_64m_32m_twindie.pdf - Rev. H 04/11 EN
Parameter
Storage temperature
Operating temperature: commercial
Revision
Die
A
C
Package
63-ball
63-ball
Notes:
Note:
Substrate
2-layer
4-layer
2-layer
4-layer
Test point
1. MAX storage case temperature T
2. MAX operating case temperature T
3. Device functionality is not guaranteed if the device exceeds maximum T
1. Thermal resistance data is based on a number of samples from multiple lots and should
in the figure below. This case temperature limit is allowed to be exceeded briefly during
package reflow, as noted in Micron technical note TN-00-15, “Recommended Soldering
Parameters.”
below.
operation.
be viewed as a typical number.
Θ JA (°C/W)
Airflow =
0m/s
49.4
36.2
62.6
45.8
Lmm x Wmm FGBA
Width (W)
Θ JA (°C/W)
Airflow =
1m/s
35.1
28.4
45.3
36.5
Electrical Specifications – Absolute Ratings
Symbol
0.5 (W)
9
T
T
STG
C
STG
C
Θ JA (°C/W)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
is measured in the center of the package, as shown
Airflow =
is measured in the center of the package, as shown
0.5 (L)
4Gb: x4, x8 TwinDie DDR2 SDRAM
2m/s
29.6
24.9
39.2
32.9
Min
–55
0
Length (L)
Θ JB (°C/W)
Max
150
85
25.7
23.9
28.5
28.1
© 2006 Micron Technology, Inc. All rights reserved.
Units
°C
°C
Θ JC (°C/W)
3.2
3.5
C
during
Notes
2, 3
1
Notes
1
1