NDS332P_NL Fairchild Semiconductor, NDS332P_NL Datasheet - Page 6

NDS332P_NL

Manufacturer Part Number
NDS332P_NL
Description
Manufacturer
Fairchild Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of NDS332P_NL

Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.3Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Continuous Drain Current
1A
Power Dissipation
500mW
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SuperSOT
Lead Free Status / Rohs Status
Compliant

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Typical Electrical Characteristics
0.8
0.6
0.4
0.2
0.005
0.002
0.001
4
3
2
1
0
0.05
0.02
0.01
Figure 13. Transconductance Variation with
1
0
0
0.5
0.2
0.1
Steady-State Power Dissipation versus
0.0001
V
0
Figue 15. SuperSOT
1
DS
1b
1a
=- 5V
D = 0.5
0.02
0.01
0.05
-0.5
0.2
0.1
Drain Current and Temperature
Copper Mounting Pad Area.
Figure 17. Transient Thermal Response Curve.
Note : Characterization performed using the conditions described in note 1b. Transient thermal response will
Single Pulse
2oz COPPER MOUNTING PAD AREA (in )
0.1
change depending on the circuit board design.
-1
I , DRAIN CURRENT (A)
D
0.001
TM _
-1.5
0.2
3 Maximum
T = -55°C
J
125°C
25°C
-2
0.01
0.3
(continued)
4.5"x5" FR-4 Board
T = 25 C
Still Air
A
2
-2.5
.
o
0.4
-3
0.1
t , TIME (sec)
1
0.03
0.01
0.5
0.1
20
10
1.4
1.2
0.8
0.6
Figure 14. Maximum Safe Operating Area
5
2
1
0.1
1
0
Current versus Copper Mounting Pad Area
Figure 16. Maximum Steady-State Drain
1a
R
SINGLE PULSE
JA
0.2
V
1b
T
= See Note 1b
GS
A
1
= 25°C
= -2.7V
2oz COPPER MOUNTING PAD AREA (in )
-V
0.5
0.1
DS
, DRAIN-SOURCE VOLTAGE (V)
1
P(pk)
2
T - T
R
R
Duty Cycle, D = t /t
J
0.2
10
JA
JA
t
1
A
(t) = r(t) * R
= See Note 1b
t
= P * R
2
5
4.5"x5" FR-4 Board
T = 25 C
Still Air
V
10
A
GS
JA
1
= -2.7V
0.3
JA
(t)
2
2
o
20
100
.
NDS332PRev. E
.
50
0.4
300

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