NDS332P_NL Fairchild Semiconductor, NDS332P_NL Datasheet

NDS332P_NL

Manufacturer Part Number

NDS332P_NL

Description

Manufacturer

Fairchild Semiconductor

Type

Power MOSFETr

Datasheet

1.NDS332P_NL.pdf (7 pages)

Specifications of NDS332P_NL

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.3Ohm

Drain-source On-volt

20V

Gate-source Voltage (max)

±8V

Continuous Drain Current

Power Dissipation

500mW

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SuperSOT

Lead Free Status / Rohs Status

Compliant

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Symbol

THERMAL CHARACTERISTICS

________________________________________________________________________________

NDS332P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

DSS

GSS

These P-Channel logic level enhancement mode power field

effect transistors are produced using Fairchild's proprietary, high

cell density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. These

devices are particularly suited for low voltage applications such as

notebook computer power management, portable electronics,

and other battery powered circuits where fast

switching, and low in-line power loss are needed in a very small

outline surface mount package.

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage - Continuous

Drain Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

- Pulsed

= 25°C unless otherwise noted

(Note 1b)

(Note 1a)

(Note 1)

(Note 1a)

high-side

Features

-1 A, -20 V, R

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

Proprietary package design using copper lead frame for

superior thermal and electrical capabilities.

High density cell design for extremely low R

Exceptional on-resistance and maximum DC current

capability.

Compact industry standard SOT-23 surface Mount

package.

NDS332P

-55 to 150

DS(ON)

0.46

250

-20

-10

0.5

±8

-1

= 0.3

= 0.41

GS(th)

@ V

< 1.0V.

= -4.5 V.

= -2.7 V

DS(ON)

June 1997

NDS332P Rev. E

Units

°C/W

°C

Related parts for NDS332P_NL

NDS332P_NL Summary of contents

Page 1

... THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient JA R Thermal Resistance, Junction-to-Case JC © 1997 Fairchild Semiconductor Corporation Features - Very low level gate drive requirements allowing direct operation in 3V circuits. V Proprietary package design using copper lead frame for high-side superior thermal and electrical capabilities. ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Current Gate - Body Leakage GSS I Current Gate - Body Leakage GSS ON ...

Page 3

Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Parameter DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I Maximum Continuous Source Current S Drain-Source Diode Forward Voltage V SD Notes the sum of the junction-to-case and case-to-ambient ...

Page 4

Typical Electrical Characteristics -2 -4.5V GS -2.5 -3.5 -3.0 -2.7 -2 -2.0 -1 -0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 1 -1A D 1.6 V ...

Page 5

Typical Electrical Characteristics 1. -250µA D 1.08 1.04 1 0.96 0.92 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with . Temperature 500 300 200 100 ...

Page 6

Typical Electrical Characteristics -55° -0 DRAIN CURRENT (A) D Figure 13. Transconductance Variation with Drain Current and Temperature 1 0.8 0 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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