FDD6676AS_NL Fairchild Semiconductor, FDD6676AS_NL Datasheet

FDD6676AS_NL

Manufacturer Part Number

FDD6676AS_NL

Description

Manufacturer

Fairchild Semiconductor

Type

Power MOSFETr

Datasheet

1.FDD6676AS_NL.pdf (8 pages)

Specifications of FDD6676AS_NL

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.0057Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

±20V

Continuous Drain Current

90A

Power Dissipation

70W

Operating Temp Range

-55C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

TO-252AA

06+

Lead Free Status / Rohs Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDD6676AS_NL

Manufacturer:

FAIRCHILD

Quantity:

12 500

Current page: 1 of 8
Download datasheet (534Kb)

FDD6676AS

30V N-Channel PowerTrench

General Description

The FDD6676AS is designed to replace a single

MOSFET and Schottky diode in synchronous DC:DC

power supplies.

maximize power conversion efficiency, providing a low

includes a patented combination of a MOSFET

monolithically integrated with a Schottky diode using

Fairchild’s monolithic SyncFET technology.

Applications

• DC/DC converter

• Low side notebook

DS(ON)

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

DSS

GSS

θJC

θJA

, T

Device Marking

FDD6676AS

STG

and low gate charge.

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

This 30V MOSFET is designed to

(TO-252)

D-PAK

TO-252

FDD6676AS

– Continuous

– Pulsed

Device

Parameter

The FDD6676AS

SyncFET

=25

C unless otherwise noted

Reel Size

13’’

(Note 1a)

(Note 1b)

(Note 1a)

(Note 1b)

(Note 3)

(Note 1)

™

Features

• 90 A, 30 V

• Includes SyncFET schottky body diode

• Low gate charge (46nC typical)

• High performance trench technology for extremely

• High power and current handling capability

• RoHS Compliant

low R

DS(ON)

Tape width

12mm

–55 to +150

DS(ON)

Ratings

±20

100

3.1

1.3

1.8

= 5.7 mΩ @ V

= 7.1 mΩ @ V

April 2008

2500 units

= 10 V

= 4.5 V

Quantity

FDD6676AS Rev A1(X)

Units

°C/W

°C

Related parts for FDD6676AS_NL

FDD6676AS_NL Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient R θJA Package Marking and Ordering Information Device Marking Device FDD6676AS FDD6676AS ©2008 Fairchild Semiconductor Corporation ® ™ SyncFET Features • • Includes SyncFET schottky body diode • Low gate charge (46nC typical) • High performance trench technology for extremely ...

Page 2

Electrical Characteristics Symbol Parameter Drain-Source Avalanche Ratings W Drain-Source Avalanche Energy DSS I Drain-Source Avalanche Current AR Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I ...

Page 3

Electrical Characteristics Symbol Parameter Drain–Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain–Source Diode Forward Current S V Drain–Source Diode Forward SD Voltage t Diode Reverse Recovery Time RR I Maximum Recovery Current RM Q Diode Reverse Recovery Charge ...

Page 4

Typical Characteristics 100 V = 10V 4.0V GS 3.5V 6. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 1 78A D V =10V GS 1.4 1.2 ...

Page 5

Typical Characteristics 78A 10V DS 6 15V GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics 1000 100 R LIMIT DS(ON) 10 100ms 1s ...

Page 6

Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery ...

Page 7

Typical Characteristics DUT vary t to obtain P 0.01Ω required peak I AS Figure 15. Unclamped Inductive Load Test Circuit Drain Current Same type as + 50kΩ ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. ® ACEx FPS™ Build it Now™ F-PFS™ CorePLUS™ FRFET CorePOWER™ Global Power Resource CROSSVOLT™ ...

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