ATmega256RZAV Atmel Corporation, ATmega256RZAV Datasheet - Page 23

• Manufacturer Part Number: ATmega256RZAV
• Manufacturer: Atmel Corporation

Specifications of ATmega256RZAV

• Flash (kbytes): 256 Kbytes
• Max. Operating Frequency: 16 MHz
• Max I/o Pins: 54
• Spi: 3
• Twi (i2c): 1
• Uart: 2
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 15
• Analog Comparators: 1
• Crypto Engine: No
• Sram (kbytes): 8
• Eeprom (bytes): 4096
• Operating Voltage (vcc): 1.8 to 3.6
• Timers: 6
• Frequency Band: 2.4 GHz
• Max Data Rate (mb/s): 0.25
• Antenna Diversity: No
• External Pa Control: No
• Power Output (dbm): 3
• Receiver Sensitivity (dbm): -101
• Receive Current Consumption (ma): 16.0
• Transmit Current Consumption (ma): 17.0
• Link Budget (dbm): 104

8.2.1
8.3
2549N–AVR–05/11
EEPROM Data Memory
Data Memory Access Times
Figure 8-2.
This section describes the general access timing concepts for internal memory access. The
internal data SRAM access is performed in two clk
Figure 8-3.
The ATmega640/1280/1281/2560/2561 contains 4Kbytes of data EEPROM memory. It is orga-
nized as a separate data space, in which single bytes can be read and written. The EEPROM
has an endurance of at least 100,000 write/erase cycles. The access between the EEPROM and
the CPU is described in the following, specifying the EEPROM Address Registers, the EEPROM
Data Register, and the EEPROM Control Register.
For a detailed description of SPI, JTAG and Parallel data downloading to the EEPROM, see
“Serial Downloading” on page
“Programming the EEPROM” on page 343
Address (HEX)
60 - 1FF
20 - 5F
0 - 1F
FFFF
Address
21FF
2200
200
clk
Data Memory Map
On-chip Data SRAM Access Cycles
Data
Data
WR
CPU
RD
Compute Address
349,
ATmega640/1280/1281/2560/2561
T1
Memory Access Instruction
416 External I/O Registers
“Programming via the JTAG Interface” on page
64 I/O Registers
External SRAM
Internal SRAM
32 Registers
(0 - 64K × 8)
respectively.
(8192 × 8)
Address valid
CPU
T2
cycles as described in
Next Instruction
T3
Figure
8-3.
354, and
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