ATtiny13A Atmel Corporation, ATtiny13A Datasheet - Page 17

no-image

ATtiny13A

Manufacturer Part Number
ATtiny13A
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of ATtiny13A

Flash (kbytes)
1 Kbytes
Pin Count
8
Max. Operating Frequency
20 MHz
Cpu
8-bit AVR
Hardware Qtouch Acquisition
No
Max I/o Pins
6
Ext Interrupts
6
Usb Speed
No
Usb Interface
No
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
4
Adc Resolution (bits)
10
Adc Speed (ksps)
15
Analog Comparators
1
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
0.06
Eeprom (bytes)
64
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 125
I/o Supply Class
1.8 to 5.5
Operating Voltage (vcc)
1.8 to 5.5
Fpu
No
Mpu / Mmu
no / no
Timers
1
Output Compare Channels
2
Pwm Channels
2
32khz Rtc
No
Calibrated Rc Oscillator
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATtiny13A-MMU
Manufacturer:
DP
Quantity:
34 000
Part Number:
ATtiny13A-MMU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
ATtiny13A-MMUR
Manufacturer:
TI
Quantity:
4 430
Company:
Part Number:
ATtiny13A-PU
Quantity:
15 000
Part Number:
ATtiny13A-SFR
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Part Number:
ATtiny13A-SHR
Manufacturer:
Laird Technologies Inc
Quantity:
400 000
Part Number:
ATtiny13A-SN
Manufacturer:
MICROCHIP
Quantity:
3 000
Part Number:
ATtiny13A-SS7R
Manufacturer:
Atmel
Quantity:
8 052
Part Number:
ATtiny13A-SSU
Manufacturer:
ATMEL
Quantity:
500
Part Number:
ATtiny13A-SSU
Manufacturer:
ST
0
Part Number:
ATtiny13A-SSU
Manufacturer:
ATMEL可看货
Quantity:
20 000
Company:
Part Number:
ATtiny13A-SSU
Quantity:
7 450
Company:
Part Number:
ATtiny13A-SSU
Quantity:
16 000
Part Number:
ATtiny13A-SSUR
Manufacturer:
ATMEL
Quantity:
8 000
Part Number:
ATtiny13A-SSUR
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
Company:
Part Number:
ATtiny13A-SSUR
Quantity:
3 900
Part Number:
ATtiny13A-SU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
5.3.1
5.3.2
5.3.3
5.3.4
5.3.5
8126E–AVR–07/10
EEPROM Read/Write Access
Atomic Byte Programming
Split Byte Programming
Erase
Write
The EEPROM Access Registers are accessible in the I/O space.
The write access times for the EEPROM are given in
tion, however, lets the user software detect when the next byte can be written. If the user code
contains instructions that write the EEPROM, some precautions must be taken. In heavily fil-
tered power supplies, V
device for some period of time to run at a voltage lower than specified as minimum for the clock
frequency used. See
problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to
details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
Using Atomic Byte Programming is the simplest mode. When writing a byte to the EEPROM, the
user must write the address into the EEARL Register and data into EEDR Register. If the
EEPMn bits are zero, writing EEPE (within four cycles after EEMPE is written) will trigger the
erase/write operation. Both the erase and write cycle are done in one operation and the total
programming time is given in
and write operations are completed. While the device is busy with programming, it is not possi-
ble to do any other EEPROM operations.
It is possible to split the erase and write cycle in two different operations. This may be useful if
the system requires short access time for some limited period of time (typically if the power sup-
ply voltage falls). In order to take advantage of this method, it is required that the locations to be
written have been erased before the write operation. But since the erase and write operations
are split, it is possible to do the erase operations when the system allows doing time-critical
operations (typically after Power-up).
To erase a byte, the address must be written to EEARL. If the EEPMn bits are 0b01, writing the
EEPE (within four cycles after EEMPE is written) will trigger the erase operation only (program-
ming time is given in
completes. While the device is busy programming, it is not possible to do any other EEPROM
operations.
To write a location, the user must write the address into EEARL and the data into EEDR. If the
EEPMn bits are 0b10, writing the EEPE (within four cycles after EEMPE is written) will trigger
the write operation only (programming time is given in
remains set until the write operation completes. If the location to be written has not been erased
before write, the data that is stored must be considered as lost. While the device is busy with
programming, it is not possible to do any other EEPROM operations.
“Atomic Byte Programming” on page 17
Table 5-1 on page
“Preventing EEPROM Corruption” on page 19
CC
is likely to rise or fall slowly on Power-up/down. This causes the
Table 5-1 on page
21). The EEPE bit remains set until the erase operation
and
21. The EEPE bit remains set until the erase
Table 5-1 on page
“Split Byte Programming” on page 17
Table 5-1 on page
for details on how to avoid
21. A self-timing func-
21). The EEPE bit
for
17

Related parts for ATtiny13A