BSS138BKS NXP Semiconductors, BSS138BKS Datasheet - Page 11

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

BSS138BKS

Manufacturer Part Number
BSS138BKS
Description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSS138BKS
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
8. Test information
BSS138BKS
Product data sheet
Fig 17. Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
All information provided in this document is subject to legal disclaimers.
P
Rev. 1 — 12 August 2011
t
1
t
2
duty cycle δ =
006aaa812
60 V, 320 mA dual N-channel Trench MOSFET
t
t
t
1
2
BSS138BKS
© NXP B.V. 2011. All rights reserved.
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