STM8S103F3

Manufacturer Part NumberSTM8S103F3
DescriptionAccess line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM
ManufacturerSTMicroelectronics
STM8S103F3 datasheet
 


Specifications of STM8S103F3

Program Memory8 Kbytes Flash; data retention 20 years at 55 °C after 10 kcyclesData Memory640 bytes true data EEPROM; endurance 300 kcycles
Ram1 KbytesAdvanced Control Timer16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization
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STM8S103K3 STM8S103F3 STM8S103F2
(1)
C is approximately equivalent to 2 x crystal Cload.
(2)
The oscillator selection can be optimized in terms of supply current using a high quality resonator with
small R
value. Refer to crystal manufacturer for more details
m
(3)
Data based on characterization results, not tested in production.
(4)
t
is the start-up time measured from the moment it is enabled (by software) to a stabilized 16
SU(HSE)
MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.
R m
L m
C m
Resonator
HSE oscillator critical g
g
= (2 × Π × f
mcrit
HSE
R
: Notional resistance (see crystal specification)
m
L
: Notional inductance (see crystal specification)
m
C
: Notional capacitance (see crystal specification)
m
Co: Shunt capacitance (see crystal specification)
C
= C
= C: Grounded external capacitance
L1
L2
g
>> g
m
mcrit
10.3.4
Internal clock sources and timing characteristics
Subject to general operating conditions for V
High speed internal RC oscillator (HSI)
Symbol
Parameter
f
Frequency
HSI
Figure 18: HSE oscillator circuit diagram
C O
C L1
OSCIN
Resonator
OSCOUT
C L2
equation
m
2
2
)
× R
(2Co + C)
m
DD
Table 34: HSI oscillator characteristics
Conditions
DocID15441 Rev 7
Electrical characteristics
f HSE to core
R F
g m
Consumption
control
STM8
and T
.
A
Min
Typ
Max
16
Unit
MHz
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