STM8S103F3

Manufacturer Part NumberSTM8S103F3
DescriptionAccess line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM
ManufacturerSTMicroelectronics
STM8S103F3 datasheet
 


Specifications of STM8S103F3

Program Memory8 Kbytes Flash; data retention 20 years at 55 °C after 10 kcyclesData Memory640 bytes true data EEPROM; endurance 300 kcycles
Ram1 KbytesAdvanced Control Timer16-bit, 4 CAPCOM channels, 3 complementary outputs, dead-time insertion and flexible synchronization
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Page 70/113

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Electrical characteristics
Symbol
Parameter
I
lkg ana
Analog input leakage current
I
lkg(inj)
Leakage current in adjacent
I/O
(1)
Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not
tested in production.
(2)
Data based on characterisation results, not tested in production.
Figure 21: Typical V
Figure 22: Typical pull-up resistance vs V
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STM8S103K3 STM8S103F3 STM8S103F2
Conditions
Min
V
≤ V
≤ V
SS
IN
DD
Injection current ±4 mA
and V
vs V
@ 4 temperatures
IL
IH
DD
DD
DocID15441 Rev 7
Typ
Max
Unit
(2)
±250
nA
(2)
±1
μA
@ 4 temperatures