ST72254G2-Auto STMicroelectronics, ST72254G2-Auto Datasheet - Page 114

• Manufacturer Part Number: ST72254G2-Auto
• Description: 8-bit MCU for automotive with single voltage Flash/ROM memory, ADC, 16-bit timers, SPI, I2C interfaces
• Manufacturer: STMicroelectronics

Specifications of ST72254G2-Auto

• Clock Sources: crystal/ceramic resonator oscillators or RC oscillators, external clock, backup Clock Security System
• 3 Power Saving Modes: Halt, Wait and Slow
• Two 16-bit Timers With: 2 input captures, 2 output compares, external clock input on one timer, PWM and Pulse generator modes (one only on ST72104Gx-Auto and ST72216G1- Auto)

ST72104Gx-Auto, ST72215Gx-Auto, ST72216Gx-Auto, ST72254Gx-Auto
EMC CHARACTERISTICS (Cont’d)
13.7.3 ESD Pin Protection Strategy
To protect an integrated circuit against Electrostat-
ic Discharge the stress must be controlled to pre-
vent degradation or destruction of the circuit ele-
ments. The stress generally affects the circuit ele-
ments which are connected to the pads but can
also affect the internal devices when the supply
pads receive the stress. The elements to be pro-
tected must not receive excessive current, voltage
or heating within their structure.
An ESD network combines the different input and
output ESD protections. This network works, by al-
lowing safe discharge paths for the pins subjected
to ESD stress. Two critical ESD stress cases are
presented in
pins and in
drain pins.
Figure 72. Positive Stress on a Standard Pad vs. V
Figure 73. Negative Stress on a Standard Pad vs. V
114/135
Main path
Path to avoid
Main path
Figure 74
Figure 72
V
V
V
V
DD
DD
SS
SS
and
and
Figure 75
Figure 73
(3a)
(3b)
(3a)
(3b)
for true open
for standard
OUT
OUT
SS
Standard Pin Protection
To protect the output structure the following ele-
ments are added:
To protect the input structure the following ele-
ments are added:
DD
– A diode to V
– A protection device between V
– A resistor in series with the pad (1)
– A diode to V
– A protection device between V
(4)
(4)
IN
IN
DD
DD
(3a) and a diode from V
(2a) and a diode from V
(2a)
(2b)
(2a)
(2b)
(1)
(1)
DD
DD
and V
and V
SS
SS
V
V
V
V
DD
SS
DD
SS
SS
SS
(3b)
(2b)
(4)
(4)