ST92150JDV1QAuto STMicroelectronics, ST92150JDV1QAuto Datasheet - Page 381

• Manufacturer Part Number: ST92150JDV1QAuto
• Description: 8/16-bit single voltage Flash MCU family with RAM, E3 TM(emulated EEPROM), CAN 2.0B and J1850 BLPD
• Manufacturer: STMicroelectronics

Specifications of ST92150JDV1QAuto

• Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
• Minimum Instruction Time: 83 ns (24 MHz int. clock)

FLASH / E
(V
Note:
(1) The maximum value depends on the number of E3 cycles/sector as shown in
(2) Relational calculation between E
Figure 160. Evolution of Worst Case E3 Page Update Time
DD
case E
operation starts with the write operation of the data (160
formed, leading to the worst case.
Note (ref. AN1152).
MAIN FLASH
RELIABILITY
= 5V ± 10%, T
300
200
100
Page Update Max
3 TM
E
3 TM
3 TM
page update, 1 of 4 consecutive write operations at the same E
80
SPECIFICATIONS
A
=
Parameter
–
40°C to +125°C, unless otherwise specified
64 kbytes Flash Sector Erase
128 kbytes Flash Chip Erase
Recovery from Power-Down
128 kbytes Flash Program
(1k E
3 TM
Erase Suspend Latency
Flash Endurance 25°C
16 bytes Page Update
Flash Endurance
E
page updates and single byte cycling is provided in a dedicated STMicroelectronics Application
Data Retention
3 TM
3 TM
Byte Program
) -40°C +105°C
Endurance
400
µ
s max
ST92124xxx-Auto/150xxxxx-Auto/250xxxx-Auto
).
Then, one of the 4 erase operations of the unused sector may be per-
800000
3 TM
10000
3000
Min
Figure
15
address (refer to AN1152). In any case, the page update
(2)
160. This maximum value corresponds to the worst
Typ
1.3
1.5
10
30
3
800
T
T
T
A
A
200
A
=125°C
=105°C
Max
=25°C
250
30
15
10
30
4
k page updates
(1)
page updates
cycles
years
Unit
ms
µs
µs
µs
s
s
s
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