FGH60N60SF Fairchild Semiconductor, FGH60N60SF Datasheet - Page 4

• Manufacturer Part Number: FGH60N60SF
• Manufacturer: Fairchild Semiconductor

FGH60N60SF Rev. A
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 9. Capacitance Characteristics
Figure 11. SOA Characteristics
6000
5000
4000
3000
2000
1000
0.01
500
100
20
16
12
0.1
10
8
4
0
1
0
1
1
Single Nonrepetitive
Pulse T C = 25 o C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
4
Gate-Emitter Voltage, V
60A
I
C
C
C
C
= 30A
res
oes
10
ies
8
120A
12
Common Emitter
V
T
C
Common Emitter
T
GE
100
10
C
= 25
= 25
GE
= 0V, f = 1MHz
CE
o
GE
[V]
CE
[V]
C
o
16
100
C
1ms
10 ms
DC
[V]
µ
10
s
µ
s
1000
20
30
4
Figure 12. Turn off Switching SOA Characteristics
Figure 8. Saturation Voltage vs. V
Figure 10. Gate charge Characteristics
300
100
10
15
12
20
16
12
1
9
6
3
0
8
4
0
0
1
0
Common Emitter
T
Safe Operating Area
V
C
GE
= 25
= 15V, T
V
Collector-Emitter Voltage, V
o
CC
C
4
Gate-Emitter Voltage, V
I
= 100V
50
C
= 30A
60A
C
Gate Charge, Q
= 125
10
8
o
C
100
12
g
100
[nC]
Common Emitter
T
C
120A
GE
= 125
150
200V
CE
[V]
16
[V]
GE
o
C
300V
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1000
200
20