FGA50N100BNTD Fairchild Semiconductor, FGA50N100BNTD Datasheet
FGA50N100BNTD
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FGA50N100BNTD Summary of contents
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... November 2008 = 2 60A CE(sat FGA50N100BNTD Units 1000 V ± 200 156 °C -55 to +150 °C -55 to +150 °C 300 Typ. Max. Units °C/W -- 0.8 °C/W -- 2.4 °C FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK Rev ...
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... Max Qty Qty per Tube per Box 30ea - Typ. Max. Units -- -- 1 ± 500 nA 4.0 5.0 7 1.5 1 2.5 2 6000 -- pF -- 260 -- pF -- 200 -- pF -- 140 -- ns -- 320 -- ns -- 630 -- ns -- 130 250 ns -- 275 350 Min. Typ. Max. Units -- 1.2 1 1.8 2.1 V 1 FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK Rev. A1 ...
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... Collector-Emitter Voltage, V [V] CE Common Emitter 30A 60A 80A I =10A Gate-Emitter Voltage Common Emitter T = 125 C 30A 60A 80A I = 10A Gate-Emitter Voltage FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK Rev. A1 ...
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... Gate Resistance Gate Resistance Common Emitter Ω V =600V 100 150 200 250 Gate Charge, Q [nC] g single pulse 0.01 0.1 R ectangular P ulse D uration [sec] FGA50N100BNTD 1000V, 50A NPT-Trench IGBT Tdoff Tr Tdon Tf 200 300 1 10 CO-PAK Rev. A1 ...
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... Fig 16. Reverse Current vs. Reverse Voltage 100 [ 120 160 200 240 di/dt [A/us] vs. di/ 150 300 600 Reverse Voltage, V [V] R FGA50N100BNTD 1000V, 50A NPT-Trench IGBT 120 100 900 CO-PAK Rev. A1 ...
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... Fairchild Semiconductor Corporation Dimensions in Millimeters FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK Rev. A1 ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ Green FPS™ ...