FGA50N100BNTD Fairchild Semiconductor, FGA50N100BNTD Datasheet - Page 4

• Manufacturer Part Number: FGA50N100BNTD
• Description: Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness
• Manufacturer: Fairchild Semiconductor

©2008Fairchild Semiconductor Corporation
1 0 0 0
Fig 7. Capacitance Characteristics
Fig 9. Switching Characteristics vs.
Fig 11. SOA Characteristics
1 0 0
0.01
10000
100
0.1
1000
10
100
1
T d o ff
T d o n
0.1
V
V
T f
T r
C C
G E
Ic MAX (Continuous)
Ic MAX (Pulsed)
Collector Current
0
1 0
= 6 0 0 V , R g = 5 1
= + /-1 5 V , T
Single Nonrepetitive
Pulse Tc = 25
Curves must be derated
linearly with increase
in temperature
Common Emitter
V
T
C
GE
= 25
= 0V, f = 1MHz
o
C
5
Collector - Emitter Voltage, V
2 0
C
Collector-Emitter Voltage, V
1
= 2 5
o
C o lle cto r C urre nt, I
C
Ω
o
C
10
DC Operation
3 0
10
15
4 0
1ms
C
20
[A ]
100
100
CE
5 0
CE
µ
[V]
s
[V]
25
50
µ
s
Coes
Cres
6 0
1000
Cies
30
10000
1E -3
0.01
Fig 8. Switching Characteristics vs.
Fig 10. Gate Charge Characteristics
1000
0.1
Fig 12. Transient Thermal Impedance of IGBT
20
15
10
100
1
1E -5
5
0
10
0
0.02
0.05
0.01
0.5
0.2
0.1
0
Common Emitter
V
T
C
CC
=25
V
V
T
=600V, R
Gate Resistance
C
CC
GE
=25
=600V, I
= +/-15V
o
1E -4
C
50
o
single pulse
C
L
50
=10
C
=60A
100
R ectangular P ulse D uration [sec]
Gate Charge, Q
Ω
1E -3
Gate Resistance, R
100
150
0.01
FGA50N100BNTD 1000V, 50A NPT-Trench IGBT
g
[nC]
200
150
G
0.1
[
Ω
]
250
1
200
Tdoff
Tdon
Tr
Tf
300
CO-PAK Rev. A1
10