FDC8602 Fairchild Semiconductor, FDC8602 Datasheet
FDC8602
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FDC8602 Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device .862 FDC8602 ©2011 Fairchild Semiconductor Corporation FDC8602 Rev.C ® MOSFET General Description = 1.2 A This N-Channel D Semiconductor‘s advanced Power Trench = 0 been optimized for r DS(on) ruggedness ...
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... Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting N-ch mH ©2011 Fairchild Semiconductor Corporation FDC8602 Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 °C ...
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... 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDC8602 Rev °C unless otherwise noted μ 1200 900 600 300 ...
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... J 0.1 0.01 0 TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability 100 0 Figure 11. Single Pulse Maximum Power Dissipation ©2011 Fairchild Semiconductor Corporation FDC8602 Rev °C unless otherwise noted J 500 = 0.8 1.0 1.2 1 100 125 C 0 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0.01 0.005 - Figure 12. ©2011 Fairchild Semiconductor Corporation FDC8602 Rev °C unless otherwise noted J SINGLE PULSE 180 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...
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... Dimensional Outline and Pad Layout ©2011 Fairchild Semiconductor Corporation FDC8602 Rev.C 6 www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2011 Fairchild Semiconductor Corporation FDC8602 Rev.C ® * PDP SPM™ Power-SPM™ ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ ...