FDC8602 Fairchild Semiconductor, FDC8602 Datasheet - Page 2

• Manufacturer Part Number: FDC8602
• Manufacturer: Fairchild Semiconductor

FDC8602 Rev.C
©2011 Fairchild Semiconductor Corporation
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
R
GS(th)
SD
ΔT
ΔT
iss
oss
rss
g
g(TOT)
g(TOT)
gs
gd
rr
Symbol
θJA
θJC
DSS
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25
°
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C; N-ch: L = 3 mH, I
θCA
AS
Parameter
= 1 A, V
is determined by the user's board design.
DD
= 100 V, V
T
J
a)
= 25 °C unless otherwise noted
130 °C/W when mounted on
a 1 in
GS
2
pad of 2 oz copper
= 10 V.
V
V
V
V
I
I
I
V
V
V
I
V
V
V
V
V
f = 1MHz
F
V
D
D
D
DD
GS
GS
GS
DS
GS
GS
GS
GS
GS
DS
DS
GS
= 1.2 A, di/dt = 100 A/μs
= 250 μA, referenced to 25 °C
= 250 μA, V
= 250 μA, referenced to 25 °C
= 50 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 5 V
= 80 V, V
= 10 V, I
= 10 V, I
= 50 V, V
= ±20 V, V
= V
= 10 V, I
= 6 V, I
= 0 V, I
2
DS
Test Conditions
, I
D
S
D
D
D
D
D
= 0.9 A
GEN
= 1.2 A
GS
GS
= 250 μA
= 1.2 A, T
GS
= 1.2 A,
= 1.2 A
= 1.2 A
DS
= 0 V
= 0 V,
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 1.2 A
J
= 50 V,
= 125 °C
(Note 2)
b)
Min
100
180 °C/W when mounted on a
minimum pad of 2 oz copper
2
0.86
Typ
285
409
489
3.2
1.3
3.5
1.7
5.4
2.3
1.2
0.6
0.4
0.4
27
12
0.8
1.6
53
17
73
-8
Max
±100
350
575
600
1.3
43
21
70
25
10
10
10
www.fairchildsemi.com
11
4
5
2
1
1
mV/°C
mV/°C
Units
mΩ
nC
μA
nA
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
Ω
V
V
V
S