BSS138W

Manufacturer Part NumberBSS138W
DescriptionThese N-Channel enhancement mode field effect transistor
ManufacturerFairchild Semiconductor
BSS138W datasheet
 


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BSS138W
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistor. These products have been designed to
minimize on-state resistance while provide rugged,
reliable, and fast switching performance.These prod-
ucts are particularly suited for low voltage, low current
applications such as small servo motor control, power
MOSFET gate drivers, and other switching applica-
tions.
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
D
T
T
Operating and Storage Junction Temperature Range
J,
STG
T
Maximum Lead Temperature for Soldering
L
Purposes, 1/16” from Case for 10 Seconds
Thermal Characteristics
Symbol
P
Maximum Power Dissipation
D
Derate Above 25°C
R
Thermal Resistance, Junction to Ambient
θJA
Package Marking and Ordering Information
Device Marking
Device
138
BSS138W
© 2010 Fairchild Semiconductor Corporation
BSS138W Rev. A0
Features
• R
DS(ON)
R
DS(ON)
• High density cell design for extremely low R
• Rugged and Reliable
• Compact industry standard SOT-323 surface mount
package
D
S
G
SOT-323
Marking : 138
T
= 25°C unless otherwise noted
A
Parameter
- Continuous
(Note1)
- Pulsed
Parameter
(Note1)
(Note1)
Reel Size
7’’
1
December 2010
= 3.5Ω @ V
= 10V, I
= 0.22A
GS
D
= 6.0Ω @ V
= 4.5V, I
= 0.22A
GS
D
DS(ON)
Value
Units
50
V
±20
V
0.21
A
0.84
A
°C
-55 to +150
°C
300
Value
Units
340
mW
2.72
mW/°C
°C/W
367
Tape width
Quantity
8mm
3000 units
www.fairchildsemi.com

BSS138W Summary of contents

  • Page 1

    ... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 138 BSS138W © 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 Features • R DS(ON) R DS(ON) • High density cell design for extremely low R • Rugged and Reliable • Compact industry standard SOT-323 surface mount ...

  • Page 2

    ... S V Drain-Source Diode Forward SD Voltage Notes: 1. 367°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% © 2010 Fairchild Semiconductor Corporation BSS138W Rev 25°C unless otherwise noted A Test Condition = 0V 250μ 250μ ...

  • Page 3

    ... V = 10V 220 mA D 2.0 1.5 1.0 0.5 - Junction Temperature ( J Figure 5. Drain-Source On Voltage with Temperature. 2 10V GS 1.6 1.2 0.8 0.4 0.0 0.0 0.1 0.2 0 Drain Current (A) D © 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 Figure 2. On-Resistance Variation with 3.5 3 10V GS 6V 2.5 4.5V 2.0 3V 1.5 2.5V 1.0 2V 0.5 2.0 2.5 3.0 0.0 Figure 4. On-Resistance Variation with 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 100 150 o C) Figure 6. Body Diode Forward Voltage Variation ...

  • Page 4

    ... V , Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve. 1 50% 30% 0.1 10 D=1% Single Pulse 0.01 1E-4 1E-3 0.01 0.1 t1, time(sec) © 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 (Continued) Figure 8. Capacitance Characteristics. 100 25V 30V 0.8 1.0 1 μ 100 s 1ms 3 10ms ...

  • Page 5

    ... Physical Dimensions 1.25±0.10 1.00±0.10 © 2010 Fairchild Semiconductor Corporation BSS138W Rev. A0 SOT-323 2.00±0.20 2.10±0.10 0.95±0.15 0.05 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min 5 3° 0.90 ±0.10 +0.05 –0.02 1.30±0.10 Dimensions in Millimeters www.fairchildsemi.com ...

  • Page 6

    ... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...