FDD7N25LZ Fairchild Semiconductor, FDD7N25LZ Datasheet

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FDD7N25LZ

Manufacturer Part Number
FDD7N25LZ
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2010 Fairchild Semiconductor Corporation
FDD7N25LZ Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDD7N25LZ
N-Channel MOSFET
250V, 6.2A, 0.55Ω
Features
• R
• Low Gate Charge ( Typ.12nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
DS(on)
STG
rss
= 0.43Ω ( Typ.)@ V
( Typ. 8pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
GS
= 10V, I
D-PAK
D
D
= 3.1A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
= 25
C unless otherwise noted*
o
C)
C
C
= 25
= 100
o
1
C
o
Description
These N-Channel enhancement mode power field effect transis
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
G
Typ
-
-
-55 to +150
Ratings
0.45
250
±20
115
300
6.2
3.7
5.5
5.6
25
56
10
especially
D
D
S
S
Max
110
UniFET
2.2
December 2010
www.fairchildsemi.com
tailored
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
to
TM

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FDD7N25LZ Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FDD7N25LZ Rev. A Description = 3.1A These N-Channel enhancement mode power field effect transis D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been ...

Page 2

... ≤ 6.2A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse Width ≤ 300 μs, Duty cycle ≤ 2.0% 5. Essentially Independent of Operating Temperature Typical Characteristics FDD7N25LZ Rev. A Package Reel Size D-PAK 380mm unless otherwise noted C Test Conditions I = 250μA, V ...

Page 3

... Note 1MHz ( C iss = shorted 10 C oss = rss = 0 Drain-Source Voltage [V] DS FDD7N25LZ Rev. A Figure 2. Transfer Characteristics *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage ...

Page 4

... Operation in This Area is Limited by R DS(on) 0.1 * Notes : Single Pulse 0.01 0 Drain-Source Voltage [ 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDD7N25LZ Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 0 250uA D 80 120 160 Figure 10. Maximum Drain Current μ μ 100 ...

Page 5

... FDD7N25LZ Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDD7N25LZ Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • ...

Page 7

... Mechanical Dimensions FDD7N25LZ Rev. A D-PAK 7 Dimensions in Millimeters Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD7N25LZ Rev. A ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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