FDD7N25LZ Fairchild Semiconductor, FDD7N25LZ Datasheet - Page 3

• Manufacturer Part Number: FDD7N25LZ
• Manufacturer: Fairchild Semiconductor

FDD7N25LZ Rev. A
Typical Performance Characteristics
1000
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
0.03
100
Figure 1. On-Region Characteristics
0.1
1.5
1.2
0.9
0.6
0.3
20
10
10
1
5
0.03
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
* Note:
GS
1. V
2. f = 1MHz
= 10.0V
GS
7.0V
5.0V
3.5V
3.0V
2.5V
V
Drain Current and Gate Voltage
3
V
0.1
DS
DS
= 0V
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
6
(
C ds = shorted
1
9
V
*Notes:
GS
1. 250
2. T
1
)
* Note : T
= 10V
C
12
= 25
μ
s Pulse Test
V
o
GS
C
10
J
15
= 25
= 20V
C
C
C
o
iss
oss
rss
C
10
30
18
3
100
0.1
0.1
30
10
10
Figure 2. Transfer Characteristics
10
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
1
1
8
6
4
2
0
0.0
1
0
V
SD
, Body Diode Forward Voltage [V]
Q
V
Variation vs. Source Current
and Temperature
0.4
2
GS
g
3
, Total Gate Charge [nC]
, Gate-Source Voltage[V]
150
o
V
V
V
C
DS
DS
DS
150
0.8
= 50V
= 125V
= 200V
3
o
6
C
-55
* Notes :
1. V
2. 250
o
C
Notes:
1. V
2. 250
25
* Note : I
25
DS
o
GS
o
μ
C
C
= 20V
s Pulse Test
μ
1.2
= 0V
s Pulse Test
4
9
D
= 6.2A
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