FDD5N50NZF Fairchild Semiconductor, FDD5N50NZF Datasheet

no-image

FDD5N50NZF

Manufacturer Part Number
FDD5N50NZF
Description
These N­Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD5N50NZFTM
Manufacturer:
Fairchild Semiconductor
Quantity:
75 790
Part Number:
FDD5N50NZFTM
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2012 Fairchild Semiconductor Corporation
FDD5N50NZF Rev. C0
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
*Drain current limited by maximum junction temperature
R
R
D
DM
AR
FDD5N50NZF
N-Channel MOSFET
500V, 3.7A, 1.75Ω
Features
• R
• Low Gate Charge ( Typ. 9nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
DS(on)
STG
rss
= 1.47Ω ( Typ.)@ V
( Typ. 4pF)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Peak Diode Recovery dv/dt
G
S
GS
= 10V, I
D-PAK
D
= 1.85A
T
C
= 25
D
o
Parameter
Parameter
C unless otherwise noted*
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
= 25
o
C)
1
C
C
= 25
= 100
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
o
C
o
C)
o
C)
G
G
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
D
D
S
S
FDD5N50NZF
FDD5N50NZF
-55 to +150
UniFET-II
62.5
6.25
62.5
500
±25
165
300
3.7
2.2
3.3
0.5
14
20
2
February 2012
www.fairchildsemi.com
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

Related parts for FDD5N50NZF

FDD5N50NZF Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2012 Fairchild Semiconductor Corporation FDD5N50NZF Rev. C0 Description = 1.85A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

Page 2

... DD G ≤ 3.7A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDD5N50NZF Rev. C0 Package Reel Size D-PAK 380mm unless otherwise noted C Test Conditions I = 250μ ...

Page 3

... C iss = shorted C oss = rss = C gd 600 400 *Note 1MHz 200 0 0 Drain-Source Voltage [V] DS FDD5N50NZF Rev. C0 Figure 2. Transfer Characteristics 10 1 *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 50 ...

Page 4

... Operation in This Area is Limited by R DS(on) 0.1 *Notes Single Pulse 0. Drain-Source Voltage [ 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDD5N50NZF Rev. C0 (Continued) *Notes μ 250 100 150 Figure 10. Maximum Drain Current μ μ 100 s 1ms 10ms ...

Page 5

... FDD5N50NZF Rev. C0 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDD5N50NZF Rev. C0 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • ...

Page 7

... Mechanical Dimensions FDD5N50NZF Rev. C0 D-PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD5N50NZF Rev. C0 ® PowerTrench PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

Related keywords