FDD5N50NZF Fairchild Semiconductor, FDD5N50NZF Datasheet - Page 3

• Manufacturer Part Number: FDD5N50NZF
• Description: These N­Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
• Manufacturer: Fairchild Semiconductor

FDD5N50NZF Rev. C0
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
0.03
800
600
400
200
0.1
3.6
3.2
2.8
2.4
2.0
1.6
1.2
10
0
1
0.1
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Note:
GS
1. V
2. f = 1MHz
=
Drain Current and Gate Voltage
GS
15.0 V
10.0 V
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
2
= 0V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
(
C ds = shorted
V
4
1
1
GS
= 10V
*Notes:
)
1. 250
2. T
C
6
C
C
iss
*Note: T
oss
rss
C
= 25
μ
s Pulse Test
V
GS
o
C
10
C
8
= 20V
10
= 25
o
C
30
10
25
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.1
10
50
10
10
1
1
8
6
4
2
0
0.4
3
0
V
SD
Variation vs. Source Current
and Temperature
150
4
, Body Diode Forward Voltage [V]
2
V
150
Q
GS
o
g
C
, Gate-Source Voltage[V]
, Total Gate Charge [nC]
o
V
V
V
0.8
C
DS
DS
DS
= 100V
= 250V
= 400V
5
4
-55
25
*Notes:
25
1. V
2. 250
o
o
6
6
o
C
*Notes:
1. V
2. 250
C
C
*Note: I
DS
1.2
GS
μ
= 20V
s Pulse Test
μ
= 0V
s Pulse Test
D
7
8
= 3.3A
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1.6
10
8