FQD17N08L Fairchild Semiconductor, FQD17N08L Datasheet - Page 3

• Manufacturer Part Number: FQD17N08L
• Manufacturer: Fairchild Semiconductor

©2000 Fairchild Semiconductor International
Typical Characteristics
1100
1000
900
800
700
600
500
400
300
200
100
0.4
0.3
0.2
0.1
0.0
10
10
0
1
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : 3.0 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
V
GS
10
V
V
DS
DS
V
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
GS
I
D
10
= 10V
, Drain Current [A]
0
20
10
V
0
GS
= 5V
C
C
C
oss
iss
rss
30
C
C
C
iss
oss
rss
※ Notes :
= C
= C
1. 250μ s Pulse Test
2. T
= C
10
※ Note : T
gs
gd
ds
1
C
+ C
= 25℃
+ C
40
gd
※ Notes :
gd
10
(C
1. V
2. f = 1 MHz
1
ds
J
GS
= shorted)
= 25℃
= 0 V
50
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
-1
1
0
1
0
0.2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25℃
Figure 2. Transfer Characteristics
150℃
2
0.4
150℃
Variation vs. Source Current
2
4
V
V
0.6
SD
GS
Q
and Temperature
-55℃
G
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
25℃
V
, Total Gate Charge [nC]
DS
6
= 64V
V
4
DS
0.8
= 40V
8
1.0
6
10
※ Notes :
※ Notes :
1.2
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
12
DS
GS
= 25V
= 0V
8
1.4
D
= 16.5A
14
Rev. A2, December 2000
1.6
10
16