FQT7N10 Fairchild Semiconductor, FQT7N10 Datasheet - Page 3

• Manufacturer Part Number: FQT7N10
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
500
400
300
200
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
0
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
3
V
V
DS
DS
, Drain-Source Voltage [V]
6
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
V
9
C
C
C
GS
iss
oss
rss
= 20V
V
GS
12
= 10V
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
1. 250μ s Pulse Test
2. T
※ Note : T
gs
gd
10
ds
1
C
+ C
+ C
= 25℃
1
gd
※ Notes :
gd
15
1. V
2. f = 1 MHz
(C
ds
J
GS
= 25℃
= shorted)
= 0 V
18
10
10
10
10
12
10
8
6
4
2
0
-1
-1
0
0
0.2
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
Figure 2. Transfer Characteristics
150℃
0.4
150℃
1
Variation vs. Source Current
0.6
4
25℃
V
V
2
and Temperature
Q
GS
SD
0.8
G
, Source-Drain Voltage [V]
-55℃
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
V
DS
= 80V
V
DS
3
1.0
= 50V
6
1.2
4
1.4
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
5
1. V
2. 250μ s Pulse Test
※ Note : I
8
GS
1.6
DS
= 0V
= 40V
D
= 7.3 A
6
1.8
2.0
Rev. A, May 2001
10
7