FQT7N10 Fairchild Semiconductor, FQT7N10 Datasheet - Page 4

• Manufacturer Part Number: FQT7N10
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
1.2
1.1
1.0
0.9
0.8
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
-2
1
0
10
Figure 7. Breakdown Voltage Variation
-1
-50
T
vs. Temperature
V
10
J
, Junction Temperature [
DS
Operation in This Area
is Limited by R
0
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
- 1
C
J
2
1
0
1 0
= 150
= 25
- 5
o
0 . 0 1
DS(on)
0 . 0 2
C
0 . 0 5
o
C
D = 0 .5
0 . 2
0 . 1
50
DC
Figure 11. Transient Thermal Response Curve
100 ms
10
1 0
1
- 4
100
(Continued)
10 ms
o
C]
※ Notes :
s in g le p u ls e
1 ms
1. V
2. I
D
1 0
t
GS
= 250 μ A
1
100 s
= 0 V
150
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
- 3
10
2
200
1 0
- 2
1 0
- 1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.6
1.2
0.8
0.4
0.0
-100
25
1 0
0
※ N o t e s :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
θ J C
J M
-50
DM
- T
50
( t ) = 6 2 . 5 ℃ /W M a x .
1 0
vs. Case Temperature
C
1
= P
T
vs. Temperature
t
J
D M
T
1
, Junction Temperature [
C
t
0
, Case Temperature [ ℃ ]
2
* Z
1
/ t
θ J C
75
1 0
2
( t )
2
50
100
1 0
3
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 0.85 A
= 10 V
150
Rev. A, May 2001
200