FDB33N25 Fairchild Semiconductor, FDB33N25 Datasheet - Page 2
FDB33N25
Manufacturer Part Number
FDB33N25
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDB33N25.pdf
(9 pages)
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Company:
Part Number:
FDB33N25
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Part Number:
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Part Number:
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Part Number:
FDB33N25TM
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20 000
FDB33N25 / FDI33N25 Rev A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.35mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
ΔBV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
d(on)
d(off)
f
DSS
GSSF
GSSR
r
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
ΔT
≤ 33A, di/dt ≤ 200A/μs, V
DSS
FDB33N25
FDI33N25
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 33A, V
DD
= 50V, R
DD
≤ BV
FDB33N25TM
Parameter
FDI33N25TU
Device
DSS
G
= 25Ω, Starting T
, Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
Package
D2-PAK
I2-PAK
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
G
DS
GS
GS
GS
F
= 250μA, Referenced to 25°C
/dt =100A/μs
= 25Ω
= 250V, V
= 200V, T
= V
= 40V, I
= 25V, V
= 200V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 125V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 250μA
= 33A
= 33A
DS
GS
D
D
DS
=16.5A
C
= 16.5A
GS
= 250μA
= 33A
= 33A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
330mm
-
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
24mm
Min.
250
-
3.0
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Typ.
0.077
1640
0.25
26.6
36.8
1.71
330
230
120
220
39
35
75
10
17
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Quantity
0.094
Max Units
2135
-100
www.fairchildsemi.com
100
430
470
160
250
132
5.0
1.4
10
59
80
48
33
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1
800
50
V/°C
nC
nC
nC
μC
μA
μA
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V