FDB33N25 Fairchild Semiconductor, FDB33N25 Datasheet

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FDB33N25

Manufacturer Part Number
FDB33N25
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology
Manufacturer
Fairchild Semiconductor
Datasheet

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©2006 Fairchild Semiconductor Corporation
FDB33N25 / FDI33N25 Rev A
FDB33N25 / FDI33N25
250V N-Channel MOSFET
Features
• 33A, 250V, R
• Low gate charge ( typical 36.8 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJA
θJA
T
STG
*
rss
( typical 39 pF)
G
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
S
= 0.094Ω @V
D
FDB Series
2
-PAK
D
GS
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
= 10 V
Parameter
Parameter
C
= 25°C)
G
C
C
D
= 25°C)
= 100°C)
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
I
FDI Series
2
-PAK
FDB33N25 / FDI33N25
Min.
--
--
--
-55 to +150
20.4
23.5
1.89
250
132
±30
918
235
300
4.5
33
33
G
Max.
0.53
62.5
40
UniFET
May 2006
S
D
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
mJ
mJ
°C/W
°C/W
°C/W
°C
°C
W
V
A
A
A
V
A
TM

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FDB33N25 Summary of contents

Page 1

... R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2006 Fairchild Semiconductor Corporation FDB33N25 / FDI33N25 Rev A Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDB33N25 / FDI33N25 Rev A Package Reel Size D2-PAK 330mm I2-PAK - T = 25°C unless otherwise noted ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3000 C oss C iss 2000 1000 C rss Drain-Source Voltage [V] DS FDB33N25 / FDI33N25 Rev A Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage ...

Page 4

... Operation in This Area is Limited by R DS(on Drain-Source Voltage [ FDB33N25 / FDI33N25 Rev A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 250 μ A 0.5 D 0.0 50 100 150 200 -100 o C] Figure 10. Maximum Drain Current ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDB33N25 / FDI33N25 Rev A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDB33N25 / FDI33N25 Rev A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDB33N25 / FDI33N25 Rev PAK 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDB33N25 / FDI33N25 Rev PAK 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDB33N25 / FDI33N25 Rev A ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench ® MicroFET™ ...

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