2SK1296 Hitachi Semiconductor, 2SK1296 Datasheet - Page 4

• Manufacturer Part Number: 2SK1296
• Description: Silicon N-Channel MOS FET
• Manufacturer: Hitachi Semiconductor

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2SK1296
0.05
0.04
0.03
0.02
0.01
2.0
1.6
1.2
0.8
0.4
–40
0
0
0
Drain to Source Saturation Voltage
Gate to Source Voltage V
Static Drain to Source on State
Resistance vs. Temperature
Case Temperature T
vs. Gate to Source Voltage
2
0
V
GS
= 4 V
V
40
4
GS
I
5 A,10 A
D
= 10 V
= 20 A
80
6
Pulse Test
Pulse Test
C
I
5 A,10 A
D
GS
20 A
10 A
(°C)
120
= 50 A
8
20 A
(V)
160
10
0.005
1.0
0.5
50
20
10
0.05
0.02
0.01
5
2
0.5
0.2
0.1
2
1.0
Pulse Test
Forward Transfer Admittance
Static Drain to Source on State
Resistance vs. Drain Current
5
Drain Current I
2
vs. Drain Current
Drain Current I
T
10
C
75°C
= 25°C
5
20
–25°C
V
GS
10
D
= 4 V
D
V
Pulse Test
(A)
50
DS
(A)
20
= 10 V
10 V
100
50
200